VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
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arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866909003279237120 |
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| author | Liu, Yizheng Peterson, Carl Saha, Chinmoy Nath Tadjer, Marko J. Krishnamoorthy, Sriram |
| author_facet | Liu, Yizheng Peterson, Carl Saha, Chinmoy Nath Tadjer, Marko J. Krishnamoorthy, Sriram |
| contents | Beta-gallium oxide (β-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 mΩ*cm2 class edge terminated vertical heterojunction diodes (HJDs) with e-beam/sputtered nickel oxide (NiOx) stack on epitaxial (011) β-Ga2O3. The power figure of merit (PFOM) of the HJD exceeds 2.3 GW/cm2. The extracted parallel plane breakdown field is > 5.3 MV/cm, which is the highest reported electric field for thick (011) β-Ga2O3 epitaxial drift layer. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_27262 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2 Liu, Yizheng Peterson, Carl Saha, Chinmoy Nath Tadjer, Marko J. Krishnamoorthy, Sriram Applied Physics Materials Science Beta-gallium oxide (β-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 mΩ*cm2 class edge terminated vertical heterojunction diodes (HJDs) with e-beam/sputtered nickel oxide (NiOx) stack on epitaxial (011) β-Ga2O3. The power figure of merit (PFOM) of the HJD exceeds 2.3 GW/cm2. The extracted parallel plane breakdown field is > 5.3 MV/cm, which is the highest reported electric field for thick (011) β-Ga2O3 epitaxial drift layer. |
| title | VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2 |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2604.27262 |