Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Nakamura, Yuki, Iwasaki, Takuya, Nakaharai, Shu, Ogawa, Shinichi, Morita, Yukinori, Watanabe, Kenji, Taniguchi, Takashi, Sasaki, Kento, Kobayashi, Kensuke
Format: Preprint
Published: 2026
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866914520899780608
author Nakamura, Yuki
Iwasaki, Takuya
Nakaharai, Shu
Ogawa, Shinichi
Morita, Yukinori
Watanabe, Kenji
Taniguchi, Takashi
Sasaki, Kento
Kobayashi, Kensuke
author_facet Nakamura, Yuki
Iwasaki, Takuya
Nakaharai, Shu
Ogawa, Shinichi
Morita, Yukinori
Watanabe, Kenji
Taniguchi, Takashi
Sasaki, Kento
Kobayashi, Kensuke
contents Negatively charged boron vacancy (VB-) defects in hexagonal boron nitride (hBN) are promising for nanoscale-proximity quantum sensing. To evaluate their performance, it is important to characterize the spin coherence times T2* and T2. In this study, we realized sub-GHz Rabi oscillations of VB- using an isotopically enriched hBN thin film directly stamped onto a narrow gold wire. Using these strong microwave pulses, we performed Ramsey interference and Hahn echo measurements. The Ramsey interference signal showed Gaussian-like decay, yielding T2* = 13.8 ns. The Hahn echo measurement gave T2 = 108.7 ns and a stretch factor of α= 1.25. These results experimentally clarify the spin coherence properties of VB- and provide an effective method for evaluating the coherence of spin defects in van der Waals thin films with broad resonance linewidths.
format Preprint
id arxiv_https___arxiv_org_abs_2604_27843
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses
Nakamura, Yuki
Iwasaki, Takuya
Nakaharai, Shu
Ogawa, Shinichi
Morita, Yukinori
Watanabe, Kenji
Taniguchi, Takashi
Sasaki, Kento
Kobayashi, Kensuke
Mesoscale and Nanoscale Physics
Negatively charged boron vacancy (VB-) defects in hexagonal boron nitride (hBN) are promising for nanoscale-proximity quantum sensing. To evaluate their performance, it is important to characterize the spin coherence times T2* and T2. In this study, we realized sub-GHz Rabi oscillations of VB- using an isotopically enriched hBN thin film directly stamped onto a narrow gold wire. Using these strong microwave pulses, we performed Ramsey interference and Hahn echo measurements. The Ramsey interference signal showed Gaussian-like decay, yielding T2* = 13.8 ns. The Hahn echo measurement gave T2 = 108.7 ns and a stretch factor of α= 1.25. These results experimentally clarify the spin coherence properties of VB- and provide an effective method for evaluating the coherence of spin defects in van der Waals thin films with broad resonance linewidths.
title Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2604.27843