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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.28083 |
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| _version_ | 1866915971141206016 |
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| author | Uulu, Doolos Aibek Khamitova, Meruyert Chen, Rui Chen, Liang Li, Ping Bagci, Hakan |
| author_facet | Uulu, Doolos Aibek Khamitova, Meruyert Chen, Rui Chen, Liang Li, Ping Bagci, Hakan |
| contents | Semiconductor-based plasmonic nanostructures support localized surface plasmon modes in the infrared region. Unlike metallic nanostructures, they support both free electrons and holes, requiring a two-fluid hydrodynamic Drude equation (HDE) to accurately capture spatial dispersion effects and low-frequency acoustic plasmon modes that cannot be described by single-fluid models. In this work, a volume integral equation (VIE)-based solver is proposed for the analysis of electromagnetic scattering from semiconductor nanostructures. The proposed approach couples the VIE, formulated in terms of the electric flux density and the free-electron and hole polarization currents, with the two-fluid HDE. The coupled system is discretized using a tetrahedral mesh and solved efficiently using a two-level iterative solver. In contrast to finite-element-based methods, the proposed VIE-based approach does not require domain-wide meshing and inherently satisfies the radiation condition, thereby eliminating artificial absorbing boundaries. Numerical results for InSb-type semiconductor nanostructures demonstrate the accuracy and efficiency of the proposed VIE-based solver and its ability to capture unique optical phenomena, such as acoustic plasmon resonances and the blueshift of localized surface plasmon resonances, that cannot be described by the single-fluid HDE or classical Drude-based models. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_28083 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Analysis of Electromagnetic Scattering from Semiconductor Nanostructures by Solving Coupled Volume Integral and Two-fluid Hydrodynamic Equations Uulu, Doolos Aibek Khamitova, Meruyert Chen, Rui Chen, Liang Li, Ping Bagci, Hakan Optics Semiconductor-based plasmonic nanostructures support localized surface plasmon modes in the infrared region. Unlike metallic nanostructures, they support both free electrons and holes, requiring a two-fluid hydrodynamic Drude equation (HDE) to accurately capture spatial dispersion effects and low-frequency acoustic plasmon modes that cannot be described by single-fluid models. In this work, a volume integral equation (VIE)-based solver is proposed for the analysis of electromagnetic scattering from semiconductor nanostructures. The proposed approach couples the VIE, formulated in terms of the electric flux density and the free-electron and hole polarization currents, with the two-fluid HDE. The coupled system is discretized using a tetrahedral mesh and solved efficiently using a two-level iterative solver. In contrast to finite-element-based methods, the proposed VIE-based approach does not require domain-wide meshing and inherently satisfies the radiation condition, thereby eliminating artificial absorbing boundaries. Numerical results for InSb-type semiconductor nanostructures demonstrate the accuracy and efficiency of the proposed VIE-based solver and its ability to capture unique optical phenomena, such as acoustic plasmon resonances and the blueshift of localized surface plasmon resonances, that cannot be described by the single-fluid HDE or classical Drude-based models. |
| title | Analysis of Electromagnetic Scattering from Semiconductor Nanostructures by Solving Coupled Volume Integral and Two-fluid Hydrodynamic Equations |
| topic | Optics |
| url | https://arxiv.org/abs/2604.28083 |