Uniaxial strain-driven ferroelastic domain control in LaAlO3
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| Autores principales: | , , , , , , , , , , , , , , , , , |
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2026
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| author | Roeper, Matthias Buschbeck, Robin Wetzel, Jakob Ritschel, Tobias Hofmann, Anna-Lena Kovtunovych, Vladyslav Pionteck, Mike N. Taboada-Gutiérrez, Javier Kuzmenko, Alexey B. Basini, Martina Unikandanunni, Vivek Kiseleva, Iuliia Geck, Jochen Kehr, Susanne C. Lederer, Maximilian Sanna, Simone Eng, Lukas M. Seddon, Samuel D. |
| author_facet | Roeper, Matthias Buschbeck, Robin Wetzel, Jakob Ritschel, Tobias Hofmann, Anna-Lena Kovtunovych, Vladyslav Pionteck, Mike N. Taboada-Gutiérrez, Javier Kuzmenko, Alexey B. Basini, Martina Unikandanunni, Vivek Kiseleva, Iuliia Geck, Jochen Kehr, Susanne C. Lederer, Maximilian Sanna, Simone Eng, Lukas M. Seddon, Samuel D. |
| contents | Multiferroic domain walls in functional oxides exhibit properties distinct from the bulk and are increasingly exploited as active elements in nanoelectronic and photonic devices. Deterministic control of domain populations has typically remained limited to local control, or removal with temperature. Here we demonstrate continuous, reversible manipulation of the ferroelastic domain structure in single-crystal LaAlO$_3$ using in-situ uniaxial strain. Combining atomic force microscopy, X-ray diffraction, and Raman spectroscopy with first-principles calculations we map the complete microscopic evolution of the twin domain population through the strain-driven transition from the rhombohedral $R\bar{3}c$ ground state toward the predicted orthorhombic $Fmmm$ phase. Applied strains below $0.5\%$ produce pronounced surface flattening and large-scale domain reorganisation, establishing uniaxial strain as a technically accessible control parameter for ferroelastic domain engineering. These results open a route to active, real-time programming of domain architectures in LaAlO$_3$-based heterostructures, with implications for strain-tunable superconducting interfaces, nanoscale phonon-polariton optics, and ultrafast lattice control. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_28183 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Uniaxial strain-driven ferroelastic domain control in LaAlO3 Roeper, Matthias Buschbeck, Robin Wetzel, Jakob Ritschel, Tobias Hofmann, Anna-Lena Kovtunovych, Vladyslav Pionteck, Mike N. Taboada-Gutiérrez, Javier Kuzmenko, Alexey B. Basini, Martina Unikandanunni, Vivek Kiseleva, Iuliia Geck, Jochen Kehr, Susanne C. Lederer, Maximilian Sanna, Simone Eng, Lukas M. Seddon, Samuel D. Materials Science Mesoscale and Nanoscale Physics Applied Physics Multiferroic domain walls in functional oxides exhibit properties distinct from the bulk and are increasingly exploited as active elements in nanoelectronic and photonic devices. Deterministic control of domain populations has typically remained limited to local control, or removal with temperature. Here we demonstrate continuous, reversible manipulation of the ferroelastic domain structure in single-crystal LaAlO$_3$ using in-situ uniaxial strain. Combining atomic force microscopy, X-ray diffraction, and Raman spectroscopy with first-principles calculations we map the complete microscopic evolution of the twin domain population through the strain-driven transition from the rhombohedral $R\bar{3}c$ ground state toward the predicted orthorhombic $Fmmm$ phase. Applied strains below $0.5\%$ produce pronounced surface flattening and large-scale domain reorganisation, establishing uniaxial strain as a technically accessible control parameter for ferroelastic domain engineering. These results open a route to active, real-time programming of domain architectures in LaAlO$_3$-based heterostructures, with implications for strain-tunable superconducting interfaces, nanoscale phonon-polariton optics, and ultrafast lattice control. |
| title | Uniaxial strain-driven ferroelastic domain control in LaAlO3 |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2604.28183 |