Multi-probe detection of domain nucleation across the metal-insulator transition in VO$_2$
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866909010041503744 |
|---|---|
| author | Paul, Shubhankar Mattoni, Giordano Ghosh, Amitava Kesarwani, Pooja Sahu, Dipak Ahlawat, Monika P, Ashok Verma, Amit Rao, Vishal Govind Sow, Chanchal |
| author_facet | Paul, Shubhankar Mattoni, Giordano Ghosh, Amitava Kesarwani, Pooja Sahu, Dipak Ahlawat, Monika P, Ashok Verma, Amit Rao, Vishal Govind Sow, Chanchal |
| contents | Electronic and structural degrees of freedom are often intimately coupled in strongly correlated systems, which result in intriguing macroscopic and microscopic phenomena. Using the well-studied material VO$_2$ as a prototype, here we explore the domain distribution across the metal-insulator transition (MIT). We use macroscopic as well as microscopic techniques, such as first-order reversal curve (FORC) and infrared imaging, to probe the domain distributions across the MIT. This study compares MIT in thin films of VO$_2$ with different grain sizes grown by pulsed laser deposition and dc sputtering. We explore the relation between the nature of the FORC distribution and the corresponding thermal hysteresis due to interactions between the supercooled metallic domains and surrounding insulating matrix. Our multi-probe study with quantitative analysis provides a correlation between the growth, domain interaction, and domain nucleation process in MIT. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_01314 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Multi-probe detection of domain nucleation across the metal-insulator transition in VO$_2$ Paul, Shubhankar Mattoni, Giordano Ghosh, Amitava Kesarwani, Pooja Sahu, Dipak Ahlawat, Monika P, Ashok Verma, Amit Rao, Vishal Govind Sow, Chanchal Strongly Correlated Electrons Materials Science Electronic and structural degrees of freedom are often intimately coupled in strongly correlated systems, which result in intriguing macroscopic and microscopic phenomena. Using the well-studied material VO$_2$ as a prototype, here we explore the domain distribution across the metal-insulator transition (MIT). We use macroscopic as well as microscopic techniques, such as first-order reversal curve (FORC) and infrared imaging, to probe the domain distributions across the MIT. This study compares MIT in thin films of VO$_2$ with different grain sizes grown by pulsed laser deposition and dc sputtering. We explore the relation between the nature of the FORC distribution and the corresponding thermal hysteresis due to interactions between the supercooled metallic domains and surrounding insulating matrix. Our multi-probe study with quantitative analysis provides a correlation between the growth, domain interaction, and domain nucleation process in MIT. |
| title | Multi-probe detection of domain nucleation across the metal-insulator transition in VO$_2$ |
| topic | Strongly Correlated Electrons Materials Science |
| url | https://arxiv.org/abs/2605.01314 |