Stochastic first-passage modeling of single-event burnout in SiC power MOSFETs

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Liu, Feiyi, Guo, Min, Chen, Shiyang, Jiang, Yuhan, Liu, Mingyang, Wang, Yang
Format:	Preprint
Published:	2026
Subjects:	Statistical Mechanics Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet

https://arxiv.org/abs/2605.02478