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Stochastic first-passage modeling of single-event burnout in SiC power MOSFETs

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Liu, Feiyi, Guo, Min, Chen, Shiyang, Jiang, Yuhan, Liu, Mingyang, Wang, Yang
Natura:	Preprint
Pubblicazione:	2026
Soggetti:	Statistical Mechanics Applied Physics
Accesso online:	Acceder al recurso
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