Strong enhancement of Er3+ emission at room temperature in Si3N4 metasurfaces
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arXiv
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| Format: | Preprint |
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2026
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| author | Wei, Fengkai Ji, Xinru Kippenberg, Tobias J. Choi, Duk-Yong Ronning, Carsten |
| author_facet | Wei, Fengkai Ji, Xinru Kippenberg, Tobias J. Choi, Duk-Yong Ronning, Carsten |
| contents | We report a significant enhancement of room-temperature photoluminescence from trivalent erbium-doped (Er3+) silicon nitride (Si3N4) metasurfaces at the telecommunication wavelength prepared via ion implantation. The metasurfaces, consisting of periodic nanocylinder arrays, are designed to support Mie-type resonances that tailor the local density of optical states. By systematically optimizing the nanocylinder radii, we achieve a photoluminescence (PL) enhancement factor of ~18 at a radius of 390 nm after thermal annealing, which is in excellent agreement with our simulations. Time-resolved PL measurements reveal a nearly ten-fold reduction in luminescence lifetime, confirming that the enhancement is primarily driven by the Purcell effect. Furthermore, we demonstrate that the PL intensity is strongly dependent on the Er3+ ion implantation depth, with a four-fold increase in emission observed from 20 nm to 80 nm ion range. These results provide a robust pathway for integrating efficient, active light sources into CMOS-compatible photonic device. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_02535 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Strong enhancement of Er3+ emission at room temperature in Si3N4 metasurfaces Wei, Fengkai Ji, Xinru Kippenberg, Tobias J. Choi, Duk-Yong Ronning, Carsten Optics Mesoscale and Nanoscale Physics We report a significant enhancement of room-temperature photoluminescence from trivalent erbium-doped (Er3+) silicon nitride (Si3N4) metasurfaces at the telecommunication wavelength prepared via ion implantation. The metasurfaces, consisting of periodic nanocylinder arrays, are designed to support Mie-type resonances that tailor the local density of optical states. By systematically optimizing the nanocylinder radii, we achieve a photoluminescence (PL) enhancement factor of ~18 at a radius of 390 nm after thermal annealing, which is in excellent agreement with our simulations. Time-resolved PL measurements reveal a nearly ten-fold reduction in luminescence lifetime, confirming that the enhancement is primarily driven by the Purcell effect. Furthermore, we demonstrate that the PL intensity is strongly dependent on the Er3+ ion implantation depth, with a four-fold increase in emission observed from 20 nm to 80 nm ion range. These results provide a robust pathway for integrating efficient, active light sources into CMOS-compatible photonic device. |
| title | Strong enhancement of Er3+ emission at room temperature in Si3N4 metasurfaces |
| topic | Optics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2605.02535 |