Image de couverture de livre

Neural-network reconstruction of THz transmission spectra using electrically tunable AlGaN/GaN plasmonic-crystal analyzer

Fuente: arXiv

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Witkowska, A., Dub, M., Sai, P., Tiwari, P., Sakowicz, M., Majewski, J. A., Knap, W.
Format:	Preprint
Publié:	2026
Sujets:	Optics Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
par: Dub, M., et autres
Publié: (2025)

Effect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaN
par: Dub, M., et autres
Publié: (2025)

Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects
par: Rehman, A., et autres
Publié: (2026)

Frequency multiplication in Terahertz band using AlGaN/GaN plasmonic crystals
par: Shur, Michael, et autres
Publié: (2025)

Extreme Terahertz Nonlinearity of AlGaN/GaN-based Grating-Gate Plasmonic Crystals
par: Sai, Pavlo, et autres
Publié: (2025)

Extreme Terahertz Nonlinearity of AlGaN/GaN‐Based Grating‐Gate Plasmonic Crystals
par: Pavlo Sai, et autres
Publié: (2025)

Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
par: Kim, Minho, et autres
Publié: (2025)

Discovery of Slot Plasma Excitations in a AlGaN/GaN Plasmonic Crystal
par: Khisameeva, A. R., et autres
Publié: (2025)

Numerical Investigation of Quasi‐Vertical GaN‐on‐Si MOSFET Incorporating AlGaN/GaN Polarization Interface and AlGaN Functional Layer
par: Zijun Lin, et autres
Publié: (2026)

In-situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas
par: Wang, Ting-Ting, et autres
Publié: (2024)

Effects of the built-in electric field on free and bound excitons in a polar GaN/AlGaN/GaN based heterostructure
par: Méchin, Loïc, et autres
Publié: (2025)

Cathodoluminescence of quantized energy states at AlGaN/GaN interface
par: Chahshouri, Fatemeh, et autres
Publié: (2024)

Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs
par: Yongkun Sin, et autres
Publié: (2025)

Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform
par: Yuanlei Zhang, et autres
Publié: (2024)

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures
par: Toi Nezu, et autres
Publié: (2024)

Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
par: Shinozaki, Motoya, et autres
Publié: (2024)

Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
par: Date, Mihir, et autres
Publié: (2017)

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
par: Zhou, Guangnan, et autres
Publié: (2021)

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures
par: Matys, Maciej, et autres
Publié: (2025)

Record Negative Photoconductivity in N‐Polar AlGaN/GaN Quantum‐Well Heterostructures
par: Maciej Matys, et autres
Publié: (2025)

Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology
par: Preethi Elizabeth Iype, et autres
Publié: (2024)

Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer
par: Ki‐Sik Im, et autres
Publié: (2024)

Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate
par: Tomoharu Sugino, et autres
Publié: (2024)

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
par: Tetsuya Suemitsu, et autres
Publié: (2026)

Plasma‐Engineered AlGaN/GaN Optoelectronic Synapses for Low‐Power Neuromorphic Computing
par: Yuliang Zhang, et autres
Publié: (2025)

Retracted: Improvement and Reduction of Self-Heating Effect in AlGaN/GaN HEMT Devices
par: Journal of Sensors
Publié: (2024)

Optimization of the Al Composition of the p‐AlGaN Electron Blocking Layer in GaInN/GaN Multiquantum‐Shell Nanowire LEDs
par: Yuta Hattori, et autres
Publié: (2024)

Experimental investigation on the effect of temperature on the frequency limit of GaAs-AlGaAs and AlGaN-GaN 2DEG Hall-effect sensors
par: Lalwani, Anand V, et autres
Publié: (2024)

Inverse Design of AlGaN/GaN HEMT RF Device with Source Connected Field Plate
par: Aurick Das, et autres
Publié: (2025)

Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes
par: Ramit Kumar Mondal, et autres
Publié: (2024)

Optimization of gate structure towards high‐sensitivity AlGaN/GaN HEMT cortisol detection
par: Hui Chang, et autres
Publié: (2024)

A New Method to Estimate Surface Donor Density (N TD ) in AlGaN/GaN HEMT by Validated DCT Simulations
par: Vaidehi Vijay Painter, et autres
Publié: (2025)

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
par: Matys, Maciej, et autres
Publié: (2024)

Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy
par: Aina Hiyama Zazuli, et autres
Publié: (2024)

Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
par: Méchin, Loïc, et autres
Publié: (2023)

I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures
par: Еnisherlova, Kira L., et autres
Publié: (2025)

Enhanced Breakdown and RF Performance in Field-Plated AlGaN/GaN HEMT for High-Power Applications
par: Rahman, Tanjim, et autres
Publié: (2025)

Modeling the Optical Efficiency of AlGaN/GaN Light Emission Diodes with 2D Carrier Localization
par: Alexandra Ibanez, et autres
Publié: (2025)

Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics
par: Abe, Takaya, et autres
Publié: (2024)

Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices
par: Pant, Nick, et autres
Publié: (2022)