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| Main Authors: | , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2605.03840 |
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Table of Contents:
- We describe the development of 1x1 mm2 InAs thermoradiative diodes grown by molecular beam epitaxy with emphasis on their reverse saturation current and break-down voltage. P-i-n diode structures grown at 450 C, with As2 flux around 3 times stoichiometry and an In effusion cell tip temperature 150 C higher than the base temperature, exhibit the best results with breakdown voltages above 0.3 V and reverse saturation current densities 200 times the radiative limit.