A Two-Step Chemical Vapor Deposition Process for the Synthesis of an Ir(111)/Borophene/2D-Hexagonal Boron Nitride Heterostructure by Intrinsic Segregation
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866910194488836096 |
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| author | Kriegel, Marko A. Omambac, Karim M. Mohanty, Smruti R. Hartl, Tobias Schulte, Stefan Ganser, Niels Dreher, Pascal Rödl, Alexandra Franzka, Steffen Sciaini, Germán Michely, Thomas Heringdorf, Frank-J. Meyer zu Hoegen, Michael Horn-von |
| author_facet | Kriegel, Marko A. Omambac, Karim M. Mohanty, Smruti R. Hartl, Tobias Schulte, Stefan Ganser, Niels Dreher, Pascal Rödl, Alexandra Franzka, Steffen Sciaini, Germán Michely, Thomas Heringdorf, Frank-J. Meyer zu Hoegen, Michael Horn-von |
| contents | We report on a two-step ultrahigh vacuum chemical vapor deposition synthesis of a vertical Ir(111)/borophene/hexagonal boron nitride heterostructure, using borazine as a single-source precursor. The process takes advantage of the finite solubility of boron in Ir: low precursor pressure at high temperature first establishes a boron reservoir in the near-surface region of the substrate, whereas subsequent growth at higher precursor pressure promotes the formation of a closed hexagonal boron nitride monolayer. During cooldown, the reduced boron solubility drives segregation to the surface, resulting in the formation of a borophene monolayer beneath the hexagonal boron nitride overlayer. The heterostructure, with micron sized grains, homogeneously covers the entire Ir substrate. The study is performed by complementary spot profile analysis low-energy electron diffraction, low-energy electron microscopy, and scanning tunneling microscopy measurements. This intrinsic segregation-assisted growth concept provides a promising route toward scalable synthesis of high-quality, vertical heterostructures of two-dimensional materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_04871 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | A Two-Step Chemical Vapor Deposition Process for the Synthesis of an Ir(111)/Borophene/2D-Hexagonal Boron Nitride Heterostructure by Intrinsic Segregation Kriegel, Marko A. Omambac, Karim M. Mohanty, Smruti R. Hartl, Tobias Schulte, Stefan Ganser, Niels Dreher, Pascal Rödl, Alexandra Franzka, Steffen Sciaini, Germán Michely, Thomas Heringdorf, Frank-J. Meyer zu Hoegen, Michael Horn-von Materials Science Applied Physics We report on a two-step ultrahigh vacuum chemical vapor deposition synthesis of a vertical Ir(111)/borophene/hexagonal boron nitride heterostructure, using borazine as a single-source precursor. The process takes advantage of the finite solubility of boron in Ir: low precursor pressure at high temperature first establishes a boron reservoir in the near-surface region of the substrate, whereas subsequent growth at higher precursor pressure promotes the formation of a closed hexagonal boron nitride monolayer. During cooldown, the reduced boron solubility drives segregation to the surface, resulting in the formation of a borophene monolayer beneath the hexagonal boron nitride overlayer. The heterostructure, with micron sized grains, homogeneously covers the entire Ir substrate. The study is performed by complementary spot profile analysis low-energy electron diffraction, low-energy electron microscopy, and scanning tunneling microscopy measurements. This intrinsic segregation-assisted growth concept provides a promising route toward scalable synthesis of high-quality, vertical heterostructures of two-dimensional materials. |
| title | A Two-Step Chemical Vapor Deposition Process for the Synthesis of an Ir(111)/Borophene/2D-Hexagonal Boron Nitride Heterostructure by Intrinsic Segregation |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2605.04871 |