Rashba engineering at van der Waals interfaces
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arXiv
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| Format: | Preprint |
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2026
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| author | Sharma, Rahul Mukherjee, Soumya Ibrahim, Fatima Verdierre, Gaétan Vojáček, Libor Mičica, Martin Massabeau, Sylvain Paull, Oliver Polewczyk, Vincent Marzari, Nicola Marty, Alain de Moraes, Isabelle Gomes Bonell, Frédéric Mangeney, Juliette Tignon, Jérôme Krizman, Gauthier Jana, Anupam Fujii, Jun Vobornik, Ivana Mazzola, Federico Li, Jing Costa, Leticia Melo Renault, Olivier Michon, Adrien Jaffrès, Henri George, Jean-Marie Chshiev, Mairbek Dhillon, Sukhdeep Jamet, Matthieu |
| author_facet | Sharma, Rahul Mukherjee, Soumya Ibrahim, Fatima Verdierre, Gaétan Vojáček, Libor Mičica, Martin Massabeau, Sylvain Paull, Oliver Polewczyk, Vincent Marzari, Nicola Marty, Alain de Moraes, Isabelle Gomes Bonell, Frédéric Mangeney, Juliette Tignon, Jérôme Krizman, Gauthier Jana, Anupam Fujii, Jun Vobornik, Ivana Mazzola, Federico Li, Jing Costa, Leticia Melo Renault, Olivier Michon, Adrien Jaffrès, Henri George, Jean-Marie Chshiev, Mairbek Dhillon, Sukhdeep Jamet, Matthieu |
| contents | Two-dimensional transition metal dichalcogenide (TMD) interfaces offer a versatile platform for studying emergent quantum phenomena and enabling novel device functionalities. When distinct TMD monolayers are stacked vertically or laterally stitched, their interfaces can exhibit unique electronic band alignments, giving rise to long-lived interlayer excitons, charge transfer effects, and moiré superlattices with correlated states. Here, we demonstrate that the interface between a large variety of two different epitaxially grown TMD monolayers controls the intensity and sign of the Rashba spin splitting, which is probed using THz spintronic emission. Optimized TMD heterobilayers, such as HfSe$_2$/PtSe$_2$, show enhanced THz emission that surpass the spin-to-charge conversion efficiency of bulk TMDs, confirming the presence of Rashba states with large spin splitting at the interface. By combining spin- and angle-resolved photoemission spectroscopy with density functional theory, we reveal that the electronic hybridization between the two different TMD monolayers gives rise to extended in-gap states with strong Rashba spin-orbit coupling. The choice of TMD layers enables to engineer the sign and strength of spin-to-charge conversion in van der Waals heterobilayers opening up perspectives to build efficient and tunable THz spintronic emitters. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_08228 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Rashba engineering at van der Waals interfaces Sharma, Rahul Mukherjee, Soumya Ibrahim, Fatima Verdierre, Gaétan Vojáček, Libor Mičica, Martin Massabeau, Sylvain Paull, Oliver Polewczyk, Vincent Marzari, Nicola Marty, Alain de Moraes, Isabelle Gomes Bonell, Frédéric Mangeney, Juliette Tignon, Jérôme Krizman, Gauthier Jana, Anupam Fujii, Jun Vobornik, Ivana Mazzola, Federico Li, Jing Costa, Leticia Melo Renault, Olivier Michon, Adrien Jaffrès, Henri George, Jean-Marie Chshiev, Mairbek Dhillon, Sukhdeep Jamet, Matthieu Mesoscale and Nanoscale Physics Materials Science Two-dimensional transition metal dichalcogenide (TMD) interfaces offer a versatile platform for studying emergent quantum phenomena and enabling novel device functionalities. When distinct TMD monolayers are stacked vertically or laterally stitched, their interfaces can exhibit unique electronic band alignments, giving rise to long-lived interlayer excitons, charge transfer effects, and moiré superlattices with correlated states. Here, we demonstrate that the interface between a large variety of two different epitaxially grown TMD monolayers controls the intensity and sign of the Rashba spin splitting, which is probed using THz spintronic emission. Optimized TMD heterobilayers, such as HfSe$_2$/PtSe$_2$, show enhanced THz emission that surpass the spin-to-charge conversion efficiency of bulk TMDs, confirming the presence of Rashba states with large spin splitting at the interface. By combining spin- and angle-resolved photoemission spectroscopy with density functional theory, we reveal that the electronic hybridization between the two different TMD monolayers gives rise to extended in-gap states with strong Rashba spin-orbit coupling. The choice of TMD layers enables to engineer the sign and strength of spin-to-charge conversion in van der Waals heterobilayers opening up perspectives to build efficient and tunable THz spintronic emitters. |
| title | Rashba engineering at van der Waals interfaces |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2605.08228 |