Two-dimensional Clay Channels for Tunable Nanofluidic Memristor
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arXiv
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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
| Publié: |
2026
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| _version_ | 1866909028213325824 |
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| author | Yadav, Sangeeta Gogoi, Raj Kumar Lokhandwala, Aziz Pandey, Siddhi Vinayak Bhardwaj, Ankit DasGupta, Sunando Radha, Boya |
| author_facet | Yadav, Sangeeta Gogoi, Raj Kumar Lokhandwala, Aziz Pandey, Siddhi Vinayak Bhardwaj, Ankit DasGupta, Sunando Radha, Boya |
| contents | Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this effect to store and process information within a single component. We report switching between distinct memory loops by tuning ion transport pathways, governed by asymmetrical device architecture and intrinsic surface-charge. Polarity-dependent memory switching between crossing-1 and crossing-2 loops is achieved solely by altering electrode configurations, without modifying electrolyte, channel surface chemistry or device structure: providing mechanistic insights into ionic memristors through a straightforward, experimentally validated strategy. The memristive characteristics are demonstrated in both in-plane and out-of-plane channel configurations with channel lengths spanning from centimeters to micrometers length scales using re-stacked vermiculite membranes and further investigated for miniaturization with devices having nanometer scale channel lengths, fabricated via ultramicrotomy method. Furthermore, we demonstrate neuromorphic functionalities, including synaptic potentiation-depression and programmable memory retention, highlighting potential for bio-inspired computing systems. Cost-effective and scalable fabrication solution processed vermiculite membrane memristors pave the way for practical integration of nanofluidic memristors for neuromorphic computing applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_08260 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Two-dimensional Clay Channels for Tunable Nanofluidic Memristor Yadav, Sangeeta Gogoi, Raj Kumar Lokhandwala, Aziz Pandey, Siddhi Vinayak Bhardwaj, Ankit DasGupta, Sunando Radha, Boya Materials Science Other Condensed Matter Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this effect to store and process information within a single component. We report switching between distinct memory loops by tuning ion transport pathways, governed by asymmetrical device architecture and intrinsic surface-charge. Polarity-dependent memory switching between crossing-1 and crossing-2 loops is achieved solely by altering electrode configurations, without modifying electrolyte, channel surface chemistry or device structure: providing mechanistic insights into ionic memristors through a straightforward, experimentally validated strategy. The memristive characteristics are demonstrated in both in-plane and out-of-plane channel configurations with channel lengths spanning from centimeters to micrometers length scales using re-stacked vermiculite membranes and further investigated for miniaturization with devices having nanometer scale channel lengths, fabricated via ultramicrotomy method. Furthermore, we demonstrate neuromorphic functionalities, including synaptic potentiation-depression and programmable memory retention, highlighting potential for bio-inspired computing systems. Cost-effective and scalable fabrication solution processed vermiculite membrane memristors pave the way for practical integration of nanofluidic memristors for neuromorphic computing applications. |
| title | Two-dimensional Clay Channels for Tunable Nanofluidic Memristor |
| topic | Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2605.08260 |