Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
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arXiv
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| Autores principales: | , , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866915997907156992 |
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| author | Tsai, Tsung-Han Wang, Chenyu Gong, Jiarui Zhou, Xuanyu Suter, Luke Hardy, Aaron Adamo, Carolina Liu, Yang Liu, Dong Bailey, Connor S Eller, Michael Liu, Stephanie Muehle, Matthias Seo, Jung-Hun Fountaine, Katherine Gambin, Vincent Ma, Zhenqiang |
| author_facet | Tsai, Tsung-Han Wang, Chenyu Gong, Jiarui Zhou, Xuanyu Suter, Luke Hardy, Aaron Adamo, Carolina Liu, Yang Liu, Dong Bailey, Connor S Eller, Michael Liu, Stephanie Muehle, Matthias Seo, Jung-Hun Fountaine, Katherine Gambin, Vincent Ma, Zhenqiang |
| contents | Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted diamond/GaN heterojunctions is therefore essential for optimizing diode performance. In this study, the band alignment of diamond/Al2O3/GaN and diamond/Al2O3/SiNx/GaN heterostructures was determined by X-ray photoelectron spectroscopy. Both structures exhibit type-II band alignment, but with different band offsets. The band offsets of the diamond/Al2O3/SiNx/GaN heterojunction are larger by 0.42 eV than those of diamond/Al2O3/GaN. This difference is attributed to a modification of the interfacial electrostatic potential, which may arise from a reduced density of positive fixed charges in the interfacial dielectric near the diamond/Al2O3 interface after insertion of the SiNx layer. These results demonstrate that interfacial-layer engineering provides an effective strategy for tailoring the band alignment of grafted diamond/GaN heterojunctions, offering guidance for the design of p-n diodes with tunable rectifying characteristics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_09108 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 Tsai, Tsung-Han Wang, Chenyu Gong, Jiarui Zhou, Xuanyu Suter, Luke Hardy, Aaron Adamo, Carolina Liu, Yang Liu, Dong Bailey, Connor S Eller, Michael Liu, Stephanie Muehle, Matthias Seo, Jung-Hun Fountaine, Katherine Gambin, Vincent Ma, Zhenqiang Materials Science Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted diamond/GaN heterojunctions is therefore essential for optimizing diode performance. In this study, the band alignment of diamond/Al2O3/GaN and diamond/Al2O3/SiNx/GaN heterostructures was determined by X-ray photoelectron spectroscopy. Both structures exhibit type-II band alignment, but with different band offsets. The band offsets of the diamond/Al2O3/SiNx/GaN heterojunction are larger by 0.42 eV than those of diamond/Al2O3/GaN. This difference is attributed to a modification of the interfacial electrostatic potential, which may arise from a reduced density of positive fixed charges in the interfacial dielectric near the diamond/Al2O3 interface after insertion of the SiNx layer. These results demonstrate that interfacial-layer engineering provides an effective strategy for tailoring the band alignment of grafted diamond/GaN heterojunctions, offering guidance for the design of p-n diodes with tunable rectifying characteristics. |
| title | Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2605.09108 |