TPA-TCT Analysis of the RD50-MPW4 Monolithic Pixel Particle Detector
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866911674085146624 |
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| author | Palomo, Francisco Rogelio Jiménez-Sánchez, Jorge Wiehe, Moritz Sonneveld, Jory Pilsl, Bernhard Muñoz-Chavero, Fernando Casanova, Raimon Irmler, Christian Sieberer, Patrick Zhang, Chenfan Zhang, Sinuo Vilella, Eva Moll, Michael |
| author_facet | Palomo, Francisco Rogelio Jiménez-Sánchez, Jorge Wiehe, Moritz Sonneveld, Jory Pilsl, Bernhard Muñoz-Chavero, Fernando Casanova, Raimon Irmler, Christian Sieberer, Patrick Zhang, Chenfan Zhang, Sinuo Vilella, Eva Moll, Michael |
| contents | The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absortion Transient Current Technique (TPA-TCT). This technique provides sensitivity maps with micrometer-scale spatial resolution, enabling the resolution of the boundaries of the detector's sensitive volume, even for small-area pixels (62x62 squared micrometers in this study). With a full 3D resolution, the depletion depth, the boundaries of the detector electric field, the 3D hit detection efficiency and the charge sharing between neighboring pixels were measured. The RD50-MPW4, a multi-project wafer chip developed by the HV-CMOS working group within the CERN RD50 collaboration, features a 64x64 DMAPS pixel matrix. Illuminating the chip from the backside, the TPA-TCT technique can characterize any pixel element in the matrix because silicon is transparent for near infrared laser light (1550 nm). Electron-hole pairs are generated only around the light focal point, deep in the silicon, so that any charge collected is precisely only from the focal point. With the TPA-TCT technique, the RD50-MPW4 was found to be have a 100\% charge collection efficiency and a depletion depth of 226 $\upmu$m. It was also found that part of the charge in the periphery of the pixel was collected in the neighboring pixel. A 3D map of the sensor clearly shows the in-pixel electronics and the limits of the depletion region. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2605_11961 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | TPA-TCT Analysis of the RD50-MPW4 Monolithic Pixel Particle Detector Palomo, Francisco Rogelio Jiménez-Sánchez, Jorge Wiehe, Moritz Sonneveld, Jory Pilsl, Bernhard Muñoz-Chavero, Fernando Casanova, Raimon Irmler, Christian Sieberer, Patrick Zhang, Chenfan Zhang, Sinuo Vilella, Eva Moll, Michael Instrumentation and Detectors The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absortion Transient Current Technique (TPA-TCT). This technique provides sensitivity maps with micrometer-scale spatial resolution, enabling the resolution of the boundaries of the detector's sensitive volume, even for small-area pixels (62x62 squared micrometers in this study). With a full 3D resolution, the depletion depth, the boundaries of the detector electric field, the 3D hit detection efficiency and the charge sharing between neighboring pixels were measured. The RD50-MPW4, a multi-project wafer chip developed by the HV-CMOS working group within the CERN RD50 collaboration, features a 64x64 DMAPS pixel matrix. Illuminating the chip from the backside, the TPA-TCT technique can characterize any pixel element in the matrix because silicon is transparent for near infrared laser light (1550 nm). Electron-hole pairs are generated only around the light focal point, deep in the silicon, so that any charge collected is precisely only from the focal point. With the TPA-TCT technique, the RD50-MPW4 was found to be have a 100\% charge collection efficiency and a depletion depth of 226 $\upmu$m. It was also found that part of the charge in the periphery of the pixel was collected in the neighboring pixel. A 3D map of the sensor clearly shows the in-pixel electronics and the limits of the depletion region. |
| title | TPA-TCT Analysis of the RD50-MPW4 Monolithic Pixel Particle Detector |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2605.11961 |