Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2026
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866914562476867584 |
|---|---|
| author | Loenders, Arne Van Damme, Jacques Godfrin, Clement Favia, Paola Franco, Jacopo Van Caekenberghe, Thomas Raes, Bart Jaliel, Gulzat Baudot, Sylvain Pinotti, Luis Francisco Grill, Alexander Simion, George Moors, Kristof Levajac, Vukan Beyne, Sofie Sharma, Sugandha Kubicek, Stefan Shimura, Yosuke Loo, Roger Mongillo, Massimo Wan, Danny De Greve, Kristiaan |
| author_facet | Loenders, Arne Van Damme, Jacques Godfrin, Clement Favia, Paola Franco, Jacopo Van Caekenberghe, Thomas Raes, Bart Jaliel, Gulzat Baudot, Sylvain Pinotti, Luis Francisco Grill, Alexander Simion, George Moors, Kristof Levajac, Vukan Beyne, Sofie Sharma, Sugandha Kubicek, Stefan Shimura, Yosuke Loo, Roger Mongillo, Massimo Wan, Danny De Greve, Kristiaan |
| contents | Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon quantum dot arrays. Using a 7 x 7 array fabricated in a 300 mm CMOS-process patterned by EUV lithography, we statistically characterize 392 quantum dots across four different oxide thicknesses. The threshold voltages, capacitances, lever arms, and charging energies are extracted using parallel row based measurements and we identify an optimal SiO2 thickness of 17 nm that minimizes threshold voltage variability below 63 mV standard deviation. Our observations illustrate how multiple sources of disorder can introduce competing oxide-thickness dependencies, resulting in non-monotonic trends. These results provide key design guidelines for dense, scalable silicon spin qubit architectures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_12143 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays Loenders, Arne Van Damme, Jacques Godfrin, Clement Favia, Paola Franco, Jacopo Van Caekenberghe, Thomas Raes, Bart Jaliel, Gulzat Baudot, Sylvain Pinotti, Luis Francisco Grill, Alexander Simion, George Moors, Kristof Levajac, Vukan Beyne, Sofie Sharma, Sugandha Kubicek, Stefan Shimura, Yosuke Loo, Roger Mongillo, Massimo Wan, Danny De Greve, Kristiaan Quantum Physics Materials Science Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon quantum dot arrays. Using a 7 x 7 array fabricated in a 300 mm CMOS-process patterned by EUV lithography, we statistically characterize 392 quantum dots across four different oxide thicknesses. The threshold voltages, capacitances, lever arms, and charging energies are extracted using parallel row based measurements and we identify an optimal SiO2 thickness of 17 nm that minimizes threshold voltage variability below 63 mV standard deviation. Our observations illustrate how multiple sources of disorder can introduce competing oxide-thickness dependencies, resulting in non-monotonic trends. These results provide key design guidelines for dense, scalable silicon spin qubit architectures. |
| title | Understanding oxide-thickness-dependent variability in dense Si-MOS quantum dot arrays |
| topic | Quantum Physics Materials Science |
| url | https://arxiv.org/abs/2605.12143 |