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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2605.12473 |
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| _version_ | 1866910213340135424 |
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| author | Cache, Félix R., Krithika V. Herzig, Tobias Kuznetsov, Andrej Yu Pezzagna, Sébastien Abbarchi, Marco Robert-Philip, Isabelle Gérard, Jean-Michel Cassabois, Guillaume Jacques, Vincent Dréau, Anaïs |
| author_facet | Cache, Félix R., Krithika V. Herzig, Tobias Kuznetsov, Andrej Yu Pezzagna, Sébastien Abbarchi, Marco Robert-Philip, Isabelle Gérard, Jean-Michel Cassabois, Guillaume Jacques, Vincent Dréau, Anaïs |
| contents | Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-band single-photon emission and its optically addressable metastable electron-spin triplet state. Here we investigate the spin properties of ensembles of G centers under above-band-gap excitation. We elucidate the spin photo-dynamics giving rise to the optical detected magnetic resonance (ODMR) response of G centers. The optimal pulsed sequence for measuring the ODMR spectrum of the G defects is identified, along with the temperature and optical-power regimes maximizing the spin readout contrast. Through magneto-optical measurements, we detect a level-anticrossing of the G center electron spin states. At last, we demonstrate coherent spin control of the defects, and characterize their spin-coherence properties. Unveiling the spin degree of freedom of the G center opens new avenues for the realization of quantum memories and quantum registers based on silicon color centers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_12473 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Optical detection of the electron spin resonances of G centers in silicon Cache, Félix R., Krithika V. Herzig, Tobias Kuznetsov, Andrej Yu Pezzagna, Sébastien Abbarchi, Marco Robert-Philip, Isabelle Gérard, Jean-Michel Cassabois, Guillaume Jacques, Vincent Dréau, Anaïs Quantum Physics Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-band single-photon emission and its optically addressable metastable electron-spin triplet state. Here we investigate the spin properties of ensembles of G centers under above-band-gap excitation. We elucidate the spin photo-dynamics giving rise to the optical detected magnetic resonance (ODMR) response of G centers. The optimal pulsed sequence for measuring the ODMR spectrum of the G defects is identified, along with the temperature and optical-power regimes maximizing the spin readout contrast. Through magneto-optical measurements, we detect a level-anticrossing of the G center electron spin states. At last, we demonstrate coherent spin control of the defects, and characterize their spin-coherence properties. Unveiling the spin degree of freedom of the G center opens new avenues for the realization of quantum memories and quantum registers based on silicon color centers. |
| title | Optical detection of the electron spin resonances of G centers in silicon |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2605.12473 |