Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride

Fuente: arXiv
Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Hazra, Mouli, Rupp, Anna, Mishuk, Mohammad N., Krause, Josefine, Kumar, Anand, Chénedé, Julien, Kang, Mingi, Tugchin, Bayarjargal N., Rikers, Marijn, Pertsch, Thomas, Högele, Alexander, Vogl, Tobias
Format: Preprint
Veröffentlicht: 2026
Schlagworte:
Online-Zugang:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
_version_ 1866914561101135872
author Hazra, Mouli
Rupp, Anna
Mishuk, Mohammad N.
Krause, Josefine
Kumar, Anand
Chénedé, Julien
Kang, Mingi
Tugchin, Bayarjargal N.
Rikers, Marijn
Pertsch, Thomas
Högele, Alexander
Vogl, Tobias
author_facet Hazra, Mouli
Rupp, Anna
Mishuk, Mohammad N.
Krause, Josefine
Kumar, Anand
Chénedé, Julien
Kang, Mingi
Tugchin, Bayarjargal N.
Rikers, Marijn
Pertsch, Thomas
Högele, Alexander
Vogl, Tobias
contents Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications. However, a persistent challenge in the field is the unclear origin of many observed emission lines, particularly in the visible range, which can be difficult to distinguish from signals arising from organic or process-induced contamination during sample preparations and handling. This ambiguity limits both the reproducibility of emitter generation and the reliable identification of truly intrinsic quantum defects. This work provides a step-by-step framework to assess whether quantum emitters in electron-irradiated hBN are associated with organic contaminants introduced during sample preparation. We employ hyperspectral imaging, thermal annealing, and oxygen plasma etching to investigate the origin of the green-yellow emitters in electron-irradiated hBN. The combined results not only rule out organic contamination as the source of emission but also provide insight into the spectral variability, thermal stability, and vertical localization of the emitters generated in electron-irradiated hBN that was created without any pre- or post-processing. In addition, our experiments demonstrate the feasibility of creating stable emitters in hBN with thicknesses below 10 nm. These findings provide practical guidance for the identification and controlled implementation of hBN-based single-photon emitters in quantum photonic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2605_12663
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride
Hazra, Mouli
Rupp, Anna
Mishuk, Mohammad N.
Krause, Josefine
Kumar, Anand
Chénedé, Julien
Kang, Mingi
Tugchin, Bayarjargal N.
Rikers, Marijn
Pertsch, Thomas
Högele, Alexander
Vogl, Tobias
Optics
Applied Physics
Quantum Physics
Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications. However, a persistent challenge in the field is the unclear origin of many observed emission lines, particularly in the visible range, which can be difficult to distinguish from signals arising from organic or process-induced contamination during sample preparations and handling. This ambiguity limits both the reproducibility of emitter generation and the reliable identification of truly intrinsic quantum defects. This work provides a step-by-step framework to assess whether quantum emitters in electron-irradiated hBN are associated with organic contaminants introduced during sample preparation. We employ hyperspectral imaging, thermal annealing, and oxygen plasma etching to investigate the origin of the green-yellow emitters in electron-irradiated hBN. The combined results not only rule out organic contamination as the source of emission but also provide insight into the spectral variability, thermal stability, and vertical localization of the emitters generated in electron-irradiated hBN that was created without any pre- or post-processing. In addition, our experiments demonstrate the feasibility of creating stable emitters in hBN with thicknesses below 10 nm. These findings provide practical guidance for the identification and controlled implementation of hBN-based single-photon emitters in quantum photonic devices.
title Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride
topic Optics
Applied Physics
Quantum Physics
url https://arxiv.org/abs/2605.12663