Quantized Transport in Floquet Topological Insulators

Fuente: arXiv
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Main Authors: Kumari, Rekha, Kulkarni, Manas, Dhar, Abhishek
Format: Preprint
Published: 2026
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author Kumari, Rekha
Kulkarni, Manas
Dhar, Abhishek
author_facet Kumari, Rekha
Kulkarni, Manas
Dhar, Abhishek
contents We study quantum transport in a periodically driven (Floquet) topological system coupled to static fermionic reservoirs. Using the Floquet nonequilibrium Green's-function (NEGF) formalism we show, from exact numerics for a strip geometry, that the two-terminal (longitudinal) conductance is quantized as $|W_{\varepsilon}|\,e^2/h$, while the Hall (transverse) conductance is quantized as $W_{\varepsilon}\,e^2/h$, where $W_{\varepsilon}$ is the Floquet winding invariant associated with the quasienergy gap at $\varepsilon = 0$ or $\varepsilon = Ω/2$. Quantization is achieved only after summing over the contribution of all Floquet sidebands. We provide an analytic understanding of this Floquet conductance sum rule, by considering the Hall conductance in the weak coupling limit. In that limit, we show that the Floquet Hall conductance gets contributions from the Floquet sidebands, which includes the signs of the velocities of the edge modes. Their sum yields exact quantization, as predicted by the Floquet sum rule. We find that in a wide range of parameter regime, the convergence is fast, making observation of the sum rule and Floquet winding numbers accessible to experiments.
format Preprint
id arxiv_https___arxiv_org_abs_2605_13066
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Quantized Transport in Floquet Topological Insulators
Kumari, Rekha
Kulkarni, Manas
Dhar, Abhishek
Mesoscale and Nanoscale Physics
Statistical Mechanics
Quantum Physics
We study quantum transport in a periodically driven (Floquet) topological system coupled to static fermionic reservoirs. Using the Floquet nonequilibrium Green's-function (NEGF) formalism we show, from exact numerics for a strip geometry, that the two-terminal (longitudinal) conductance is quantized as $|W_{\varepsilon}|\,e^2/h$, while the Hall (transverse) conductance is quantized as $W_{\varepsilon}\,e^2/h$, where $W_{\varepsilon}$ is the Floquet winding invariant associated with the quasienergy gap at $\varepsilon = 0$ or $\varepsilon = Ω/2$. Quantization is achieved only after summing over the contribution of all Floquet sidebands. We provide an analytic understanding of this Floquet conductance sum rule, by considering the Hall conductance in the weak coupling limit. In that limit, we show that the Floquet Hall conductance gets contributions from the Floquet sidebands, which includes the signs of the velocities of the edge modes. Their sum yields exact quantization, as predicted by the Floquet sum rule. We find that in a wide range of parameter regime, the convergence is fast, making observation of the sum rule and Floquet winding numbers accessible to experiments.
title Quantized Transport in Floquet Topological Insulators
topic Mesoscale and Nanoscale Physics
Statistical Mechanics
Quantum Physics
url https://arxiv.org/abs/2605.13066