Highly Efficient Exciton Modulation in MoSe$_2$/PdSe$_2$ Heterostructures
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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| author | Rozhin, Petr Contin, Emma Katrisioti, Danae Weickhardt, Till Ramzan, Muhammad Sufyan Bertolotti, Micol Loudhaief, Nouha Wu, Bing Sofer, Zdeněk Taniguchi, Takashi Watanabe, Kenji Puppulin, Leonardo Conte, Stefano Dal Cocchi, Caterina Paradisanos, Ioannis Soavi, Giancarlo Salvatore, Giovanni Antonio De Fazio, Domenico |
| author_facet | Rozhin, Petr Contin, Emma Katrisioti, Danae Weickhardt, Till Ramzan, Muhammad Sufyan Bertolotti, Micol Loudhaief, Nouha Wu, Bing Sofer, Zdeněk Taniguchi, Takashi Watanabe, Kenji Puppulin, Leonardo Conte, Stefano Dal Cocchi, Caterina Paradisanos, Ioannis Soavi, Giancarlo Salvatore, Giovanni Antonio De Fazio, Domenico |
| contents | Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches, such as defect passivation, chemical doping, dielectric engineering, and strain tuning, primarily aim to suppress non-radiative losses. Here, we report a pronounced $\sim$6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe$_2$/PdSe$_2$ van der Waals heterostructure, yielding a photoluminescence quantum yield of 6 %, compared to $\sim$1 % for as-exfoliated monolayer MoSe$_2$. This enhancement is accompanied by strong quenching of the B-exciton, consistent with interlayer electronic coupling that redistributes exciton populations toward the radiative A-exciton channel. Power- and temperature-dependent measurements reveal a suppression of exciton-exciton annihilation and a crossover to quenched emission at low temperature, indicating a redistribution of exciton relaxation pathways. Photoluminescence excitation spectroscopy further reveals a broadband enhancement spanning 450-725 nm, ruling out a resonance-specific mechanism. These results demonstrate that interlayer electronic coupling can be used as an efficient means to redirect exciton populations toward radiative channels, enhancing emission efficiency in two-dimensional semiconductors without chemical modification or strain. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2605_13211 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Highly Efficient Exciton Modulation in MoSe$_2$/PdSe$_2$ Heterostructures Rozhin, Petr Contin, Emma Katrisioti, Danae Weickhardt, Till Ramzan, Muhammad Sufyan Bertolotti, Micol Loudhaief, Nouha Wu, Bing Sofer, Zdeněk Taniguchi, Takashi Watanabe, Kenji Puppulin, Leonardo Conte, Stefano Dal Cocchi, Caterina Paradisanos, Ioannis Soavi, Giancarlo Salvatore, Giovanni Antonio De Fazio, Domenico Mesoscale and Nanoscale Physics Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches, such as defect passivation, chemical doping, dielectric engineering, and strain tuning, primarily aim to suppress non-radiative losses. Here, we report a pronounced $\sim$6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe$_2$/PdSe$_2$ van der Waals heterostructure, yielding a photoluminescence quantum yield of 6 %, compared to $\sim$1 % for as-exfoliated monolayer MoSe$_2$. This enhancement is accompanied by strong quenching of the B-exciton, consistent with interlayer electronic coupling that redistributes exciton populations toward the radiative A-exciton channel. Power- and temperature-dependent measurements reveal a suppression of exciton-exciton annihilation and a crossover to quenched emission at low temperature, indicating a redistribution of exciton relaxation pathways. Photoluminescence excitation spectroscopy further reveals a broadband enhancement spanning 450-725 nm, ruling out a resonance-specific mechanism. These results demonstrate that interlayer electronic coupling can be used as an efficient means to redirect exciton populations toward radiative channels, enhancing emission efficiency in two-dimensional semiconductors without chemical modification or strain. |
| title | Highly Efficient Exciton Modulation in MoSe$_2$/PdSe$_2$ Heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2605.13211 |