Comparative assessment of germanium-based spin-qubit modalities: donor, acceptor, gate-defined hole, and gate-defined electron platforms
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| author | Mei, D. -M. Dong, K. -M. Panamaldeniya, S. A. Prem, A. Chhetri, S. Budhathoki, N. Bhattarai, S. |
| author_facet | Mei, D. -M. Dong, K. -M. Panamaldeniya, S. A. Prem, A. Chhetri, S. Budhathoki, N. Bhattarai, S. |
| contents | High-purity germanium (Ge) has re-emerged as a versatile semiconductor platform for spin-based quantum information processing because it combines mature materials processing, access to spin-free isotopes, high mobilities, small effective masses, and strong but engineerable spin--orbit coupling. However, ``Ge qubits'' are not a single technology. Donor spin qubits, acceptor spin qubits, gate-defined hole spin qubits, and gate-defined electron spin qubits exploit different parts of the Ge band structure and therefore make distinct trade-offs among coherence, controllability, fabrication complexity, and scalability. Here we compare these four Ge-based spin-qubit modalities on a common physical and architectural footing. We review the shared Ge materials physics, including isotopic purification, the multivalley \(L\)-point conduction band, the spin-\(3/2\) valence band, heavy-hole/light-hole mixing, strain, interfaces, disorder, and phonons. We also introduce a common framework for estimating phononic-crystal-modified \(T_1\) using a calibrated reference relaxation rate, a geometry-dependent strain-density-of-states suppression factor, and parasitic relaxation channels. The comparison shows that gate-defined Ge hole-spin qubits currently offer the strongest combination of all-electrical control, demonstrated multiqubit operation, and scalability. Donor, acceptor, and gate-defined electron qubits remain important complementary directions for memory, hybrid, and exploratory architectures. Overall, Ge supports a diverse qubit ecosystem, with gate-defined hole-spin qubits presently providing the clearest path toward scalable Ge-based quantum processors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_13680 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Comparative assessment of germanium-based spin-qubit modalities: donor, acceptor, gate-defined hole, and gate-defined electron platforms Mei, D. -M. Dong, K. -M. Panamaldeniya, S. A. Prem, A. Chhetri, S. Budhathoki, N. Bhattarai, S. Quantum Physics High-purity germanium (Ge) has re-emerged as a versatile semiconductor platform for spin-based quantum information processing because it combines mature materials processing, access to spin-free isotopes, high mobilities, small effective masses, and strong but engineerable spin--orbit coupling. However, ``Ge qubits'' are not a single technology. Donor spin qubits, acceptor spin qubits, gate-defined hole spin qubits, and gate-defined electron spin qubits exploit different parts of the Ge band structure and therefore make distinct trade-offs among coherence, controllability, fabrication complexity, and scalability. Here we compare these four Ge-based spin-qubit modalities on a common physical and architectural footing. We review the shared Ge materials physics, including isotopic purification, the multivalley \(L\)-point conduction band, the spin-\(3/2\) valence band, heavy-hole/light-hole mixing, strain, interfaces, disorder, and phonons. We also introduce a common framework for estimating phononic-crystal-modified \(T_1\) using a calibrated reference relaxation rate, a geometry-dependent strain-density-of-states suppression factor, and parasitic relaxation channels. The comparison shows that gate-defined Ge hole-spin qubits currently offer the strongest combination of all-electrical control, demonstrated multiqubit operation, and scalability. Donor, acceptor, and gate-defined electron qubits remain important complementary directions for memory, hybrid, and exploratory architectures. Overall, Ge supports a diverse qubit ecosystem, with gate-defined hole-spin qubits presently providing the clearest path toward scalable Ge-based quantum processors. |
| title | Comparative assessment of germanium-based spin-qubit modalities: donor, acceptor, gate-defined hole, and gate-defined electron platforms |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2605.13680 |