Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios

Fuente: arXiv

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Bibliographic Details
Main Authors:	Yang, Xu, Zhang, Sheng, Wei, Ke, Wang, Xinhua, Liu, Xinyu, Furuhashi, Itsuki, Pristovsek, Markus
Format:	Preprint
Published:	2026
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2605.14329