High-Efficiency InGaP-on-Insulator Microresonator Nonlinear Conversion and Entanglement Generation

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Li, Xuefeng, Thiel, Lillian, Pang, Yiming, Shimamura, Amalu, Wang, Lucas, Castro, Joshua, Meunier, Max, Lewis, Nicholas, Bowers, John, Silverman, Kevin, Mirin, Richard, Moody, Galan
Formato: Preprint
Publicado: 2026
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866918502977241088
author Li, Xuefeng
Thiel, Lillian
Pang, Yiming
Shimamura, Amalu
Wang, Lucas
Castro, Joshua
Meunier, Max
Lewis, Nicholas
Bowers, John
Silverman, Kevin
Mirin, Richard
Moody, Galan
author_facet Li, Xuefeng
Thiel, Lillian
Pang, Yiming
Shimamura, Amalu
Wang, Lucas
Castro, Joshua
Meunier, Max
Lewis, Nicholas
Bowers, John
Silverman, Kevin
Mirin, Richard
Moody, Galan
contents InGaP-on-insulator, with its intrinsically high $χ^{(2)}$ optical nonlinearity, has emerged as an efficient and bright integrated photonic platform for frequency conversion and on-chip entanglement generation, but high waveguide propagation loss in the visible wavelength range has limited its overall performance. Here, we identify the dominant loss mechanism through mode-profile analysis and effectively mitigate the loss using a surface treatment method. Statistical analysis of the resonator quality factor and propagation loss reveals the optimal ring radius that maintains a strong nonlinear interaction while suppressing significant bending related loss, resulting in loss as low as 0.49 dB/cm (4.31 dB/cm) at 1560 nm (780 nm). The method provides a 3.5--4$\times$ linear performance enhancement, enabling a second-harmonic generation efficiency of $3.01\times10^{5}$ %/W and a photon-pair generation rate of $11.7,\mathrm{MHz}/μ\mathrm{W}$ and coincidence-to-accidental ratio as high as 10,000. The quasi-phase matching condition is experimentally verified, and nonlinear conversion is systematically characterized across the entire parameter space. This work establishes a scalable pathway for classical and quantum photonics in a low-loss, highly nonlinear, and wafer-scale integration platform.
format Preprint
id arxiv_https___arxiv_org_abs_2605_15481
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle High-Efficiency InGaP-on-Insulator Microresonator Nonlinear Conversion and Entanglement Generation
Li, Xuefeng
Thiel, Lillian
Pang, Yiming
Shimamura, Amalu
Wang, Lucas
Castro, Joshua
Meunier, Max
Lewis, Nicholas
Bowers, John
Silverman, Kevin
Mirin, Richard
Moody, Galan
Applied Physics
InGaP-on-insulator, with its intrinsically high $χ^{(2)}$ optical nonlinearity, has emerged as an efficient and bright integrated photonic platform for frequency conversion and on-chip entanglement generation, but high waveguide propagation loss in the visible wavelength range has limited its overall performance. Here, we identify the dominant loss mechanism through mode-profile analysis and effectively mitigate the loss using a surface treatment method. Statistical analysis of the resonator quality factor and propagation loss reveals the optimal ring radius that maintains a strong nonlinear interaction while suppressing significant bending related loss, resulting in loss as low as 0.49 dB/cm (4.31 dB/cm) at 1560 nm (780 nm). The method provides a 3.5--4$\times$ linear performance enhancement, enabling a second-harmonic generation efficiency of $3.01\times10^{5}$ %/W and a photon-pair generation rate of $11.7,\mathrm{MHz}/μ\mathrm{W}$ and coincidence-to-accidental ratio as high as 10,000. The quasi-phase matching condition is experimentally verified, and nonlinear conversion is systematically characterized across the entire parameter space. This work establishes a scalable pathway for classical and quantum photonics in a low-loss, highly nonlinear, and wafer-scale integration platform.
title High-Efficiency InGaP-on-Insulator Microresonator Nonlinear Conversion and Entanglement Generation
topic Applied Physics
url https://arxiv.org/abs/2605.15481