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Main Authors: Llusar, Jordi, Adel, Abdessamad El, De Trizio, Luca, Manna, Liberato, Hens, Zeger, Infante, Ivan
Format: Preprint
Published: 2026
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Online Access:https://arxiv.org/abs/2605.16038
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author Llusar, Jordi
Adel, Abdessamad El
De Trizio, Luca
Manna, Liberato
Hens, Zeger
Infante, Ivan
author_facet Llusar, Jordi
Adel, Abdessamad El
De Trizio, Luca
Manna, Liberato
Hens, Zeger
Infante, Ivan
contents In core/shell quantum dots (QDs), the interface between semiconductors of different chemical character largely determines their optoelectronic properties. In III-V/II-VI systems, this boundary involves pronounced chemical and electronic discontinuities that can generate trap states even under complete surface passivation. Using density functional theory on atomistic models of InAs/CdSe QDs, we systematically reconstruct atomic arrangements at the surface and interface to evaluate how local coordination and interfacial dipoles influence the electronic structure. Abrupt interfaces induce charge imbalance and band-gap collapse, whereas introducing an alloyed interlayer that mixes core and shell atoms and vacancies restores energetic alignment and yields delocalized band-edge states, consistent with experimental findings. We also introduce a charge-flow analysis that quantifies charge redistribution across the QD, providing a framework for realistic modeling of interlayer formation and predictive design of defect-free interfaces in core@shell architectures.
format Preprint
id arxiv_https___arxiv_org_abs_2605_16038
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Interfacial Reconstructions and Engineering in III-V@II-VI Core-Shell Quantum Dots
Llusar, Jordi
Adel, Abdessamad El
De Trizio, Luca
Manna, Liberato
Hens, Zeger
Infante, Ivan
Materials Science
In core/shell quantum dots (QDs), the interface between semiconductors of different chemical character largely determines their optoelectronic properties. In III-V/II-VI systems, this boundary involves pronounced chemical and electronic discontinuities that can generate trap states even under complete surface passivation. Using density functional theory on atomistic models of InAs/CdSe QDs, we systematically reconstruct atomic arrangements at the surface and interface to evaluate how local coordination and interfacial dipoles influence the electronic structure. Abrupt interfaces induce charge imbalance and band-gap collapse, whereas introducing an alloyed interlayer that mixes core and shell atoms and vacancies restores energetic alignment and yields delocalized band-edge states, consistent with experimental findings. We also introduce a charge-flow analysis that quantifies charge redistribution across the QD, providing a framework for realistic modeling of interlayer formation and predictive design of defect-free interfaces in core@shell architectures.
title Interfacial Reconstructions and Engineering in III-V@II-VI Core-Shell Quantum Dots
topic Materials Science
url https://arxiv.org/abs/2605.16038