Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films
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arXiv
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| Natura: | Preprint |
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2026
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| author | Guo, Xiaoyu Seok, Hae-Jun Quinn, Eilidh L. Sharpe, Matthew K McAleese, Callum. D. Huang, Yi-Teng Li, Xinjuan Li, Kexue Chang, Chia-Yu Wang, Yongjie O'Sullivan, John Moore, Katie L. Ducati, Caterina Bonilla, Ruy Sebastian Kim, Han-Ki Sekkat, Abderrahime Hoye, Robert L. Z. |
| author_facet | Guo, Xiaoyu Seok, Hae-Jun Quinn, Eilidh L. Sharpe, Matthew K McAleese, Callum. D. Huang, Yi-Teng Li, Xinjuan Li, Kexue Chang, Chia-Yu Wang, Yongjie O'Sullivan, John Moore, Katie L. Ducati, Caterina Bonilla, Ruy Sebastian Kim, Han-Ki Sekkat, Abderrahime Hoye, Robert L. Z. |
| contents | Transparent conducting oxides (TCOs) are essential for the optoelectronics industry, but there is a critical gap in cost-effective methods to rapidly deposit low sheet resistance, high transmittance films without damaging delicate materials, including emerging soft semiconductors like metal-halide perovskites. In this work, atmospheric pressure chemical vapor deposition (AP-CVD) is used to synthesise H:In2O3 films with 7.20+/-0.01 Ohm/sq sheet resistance (0.50+/-0.06 mOhm.cm resistivity) and transmittance up to 89% in the near-infrared (NIR), surpassing commercial sputter-deposited indium tin oxide. The growth rate is 40x higher than atomic layer deposition (ALD), and the AP-CVD films are fully processed under atmospheric conditions at only 140 C. Comparison of secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis with changes in carrier concentration indicate that H dopants are introduced from the water oxidant. There is an increase in mobility form 40+/-10 cm2/Vs to 160+/-30 cm2/Vs when changing from O2 to H2O as the oxidant, which is attributed to H dopants passivating oxygen vacancies that act as carrier scattering centers. This work establishes AP-CVD as a promising method for manufacturing high figure-of-merit TCOs in a rapid, scalable and cost-effective manner, using mild growth conditions compatible with thermally-sensitive materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_16166 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films Guo, Xiaoyu Seok, Hae-Jun Quinn, Eilidh L. Sharpe, Matthew K McAleese, Callum. D. Huang, Yi-Teng Li, Xinjuan Li, Kexue Chang, Chia-Yu Wang, Yongjie O'Sullivan, John Moore, Katie L. Ducati, Caterina Bonilla, Ruy Sebastian Kim, Han-Ki Sekkat, Abderrahime Hoye, Robert L. Z. Materials Science Transparent conducting oxides (TCOs) are essential for the optoelectronics industry, but there is a critical gap in cost-effective methods to rapidly deposit low sheet resistance, high transmittance films without damaging delicate materials, including emerging soft semiconductors like metal-halide perovskites. In this work, atmospheric pressure chemical vapor deposition (AP-CVD) is used to synthesise H:In2O3 films with 7.20+/-0.01 Ohm/sq sheet resistance (0.50+/-0.06 mOhm.cm resistivity) and transmittance up to 89% in the near-infrared (NIR), surpassing commercial sputter-deposited indium tin oxide. The growth rate is 40x higher than atomic layer deposition (ALD), and the AP-CVD films are fully processed under atmospheric conditions at only 140 C. Comparison of secondary ion mass spectrometry and time-of-flight elastic recoil detection analysis with changes in carrier concentration indicate that H dopants are introduced from the water oxidant. There is an increase in mobility form 40+/-10 cm2/Vs to 160+/-30 cm2/Vs when changing from O2 to H2O as the oxidant, which is attributed to H dopants passivating oxygen vacancies that act as carrier scattering centers. This work establishes AP-CVD as a promising method for manufacturing high figure-of-merit TCOs in a rapid, scalable and cost-effective manner, using mild growth conditions compatible with thermally-sensitive materials. |
| title | Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2605.16166 |