Development of Segmented 4H-SiC LGADs
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arXiv
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| Autores principales: | , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866916020286914560 |
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| author | Kráčmar, Vojtěch Chochol, Jan Klimsza, Adam Kozáková, Jana Kozelsky, Adam Kroll, Jiří Kubránska, Adela Marčišovská, Mária Mikeštíková, Marcela Novotný, Radek Privat, Aymeric Slovák, Peter Vasiljev, Tobiáš Švihra, Peter |
| author_facet | Kráčmar, Vojtěch Chochol, Jan Klimsza, Adam Kozáková, Jana Kozelsky, Adam Kroll, Jiří Kubránska, Adela Marčišovská, Mária Mikeštíková, Marcela Novotný, Radek Privat, Aymeric Slovák, Peter Vasiljev, Tobiáš Švihra, Peter |
| contents | The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the comparatively low charge generation in SiC, the Low-Gain Avalanche Detector (LGAD) concept can be adopted to provide internal signal amplification. Building on three preceding generations of single-pad 4H-SiC LGAD prototypes fabricated by ion implantation, this work presents the design, fabrication, and initial characterization of segmented 4H-SiC LGAD devices -- the first fabricated and characterized devices reported. Strip detectors with 80~$μ$m pitch and pixel arrays with 55 and 110~$μ$m pitch were produced using multiple inter-channel isolation strategies, including geometric separation and oxide-filled trenches. Two-photon absorption transient current technique (TPA-TCT) measurements performed at ELI ERIC demonstrate clear charge separation between adjacent strips with internal gain, confirming functional segmentation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_17192 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Development of Segmented 4H-SiC LGADs Kráčmar, Vojtěch Chochol, Jan Klimsza, Adam Kozáková, Jana Kozelsky, Adam Kroll, Jiří Kubránska, Adela Marčišovská, Mária Mikeštíková, Marcela Novotný, Radek Privat, Aymeric Slovák, Peter Vasiljev, Tobiáš Švihra, Peter Instrumentation and Detectors The wide-bandgap semiconductor 4H-silicon carbide (4H-SiC) offers a compelling combination of radiation hardness, thermal stability, and high critical electric field for particle detection in harsh environments. To compensate for the comparatively low charge generation in SiC, the Low-Gain Avalanche Detector (LGAD) concept can be adopted to provide internal signal amplification. Building on three preceding generations of single-pad 4H-SiC LGAD prototypes fabricated by ion implantation, this work presents the design, fabrication, and initial characterization of segmented 4H-SiC LGAD devices -- the first fabricated and characterized devices reported. Strip detectors with 80~$μ$m pitch and pixel arrays with 55 and 110~$μ$m pitch were produced using multiple inter-channel isolation strategies, including geometric separation and oxide-filled trenches. Two-photon absorption transient current technique (TPA-TCT) measurements performed at ELI ERIC demonstrate clear charge separation between adjacent strips with internal gain, confirming functional segmentation. |
| title | Development of Segmented 4H-SiC LGADs |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2605.17192 |