Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866918507843682304 |
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| author | Tahir, Rabbia Wyborski, Paweł Tuktamyshev, Artur Vichi, Stefano Nötzel, Richard Munkhbat, Battulga Sanguinetti, Stefano |
| author_facet | Tahir, Rabbia Wyborski, Paweł Tuktamyshev, Artur Vichi, Stefano Nötzel, Richard Munkhbat, Battulga Sanguinetti, Stefano |
| contents | Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In$_{0.7}$Ga$_{0.3}$As/In$_{0.7}$Al$_{0.3}$As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In$_{0.7}$Al$_{0.3}$As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C$_{3v}$ symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of $\approx$ 1.3--1.9 ns and linewidths as low as $\approx$ 300 $μ$eV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a $g^{(2)}(0)$ value of $0.141 \pm 0.027$ |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_17332 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band Tahir, Rabbia Wyborski, Paweł Tuktamyshev, Artur Vichi, Stefano Nötzel, Richard Munkhbat, Battulga Sanguinetti, Stefano Quantum Physics Mesoscale and Nanoscale Physics Non-classical photon sources made of semiconductor quantum dots (QDs) emitting in the telecommunication C-band are crucial components for low-loss, long-distance photonic quantum communication networks. Here we designed and fabricated strain--free In$_{0.7}$Ga$_{0.3}$As/In$_{0.7}$Al$_{0.3}$As QDs grown on GaAs(111)A substrates working as single-photon emitters in the 1550 nm window. The QDs were grown via local droplet etching method in a molecular beam epitaxy environment, employing a thin In$_{0.7}$Al$_{0.3}$As metamorphic buffer layer with the same lattice constant of the QD material, thus allowing for a completely strain--free self-assembly of the QDs. The QDs exhibit a C$_{3v}$ symmetry with a ground state emission in the 1400--1600 nm range. The exciton lifetimes of $\approx$ 1.3--1.9 ns and linewidths as low as $\approx$ 300 $μ$eV show the good quality of the fabricated QDs. Second-order autocorrelation measurements under pulsed excitation confirmed the single-photon purity of the emitters, yielding a $g^{(2)}(0)$ value of $0.141 \pm 0.027$ |
| title | Strain-free, symmetrical, InGaAs quantum dots as single photon emitters in the telecomC-band |
| topic | Quantum Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2605.17332 |