A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866916021305081856 |
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| author | Thiel, Lillian Shen, Boqiang Venneberg, Jasper R. Guidry, Melissa A. Arnaud, Nic Slater, Adam Wang, Lucas Li, Xuefeng Castro, Josh Pang, Yiming Meunier, Max Patel, Sahil D. Shen, Yang Morin, Theodore Kudelin, Igor Song, Bowen Asawa, Kaustubh Bowers, John E. Vahala, Kerry Mavalvala, Nergis Yin, Xinghui Bowers, Steven Tran, Minh A. Komljenovic, Tin Moody, Galan |
| author_facet | Thiel, Lillian Shen, Boqiang Venneberg, Jasper R. Guidry, Melissa A. Arnaud, Nic Slater, Adam Wang, Lucas Li, Xuefeng Castro, Josh Pang, Yiming Meunier, Max Patel, Sahil D. Shen, Yang Morin, Theodore Kudelin, Igor Song, Bowen Asawa, Kaustubh Bowers, John E. Vahala, Kerry Mavalvala, Nergis Yin, Xinghui Bowers, Steven Tran, Minh A. Komljenovic, Tin Moody, Galan |
| contents | Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high performance have been challenging to realize. Here we demonstrate a wafer-scale III-V-on-SiN quantum photonic platform that directly integrates III-V layers to foundry-fabricated SiN circuits. The SiN layer provides 200-300 nm thick waveguides with $<1$ dB/m loss and a mature passive photonics ecosystem, while III-V materials provide large $χ^{\left(2\right)}$ and $χ^{\left(3\right)}$ nonlinearities for parametric gain, frequency conversion and quantum light generation. Adiabatic interlayer couplers yield $<25$ mdB loss to InGaP waveguides and resonators with intrinsic quality factors exceeding $10^6$, enabling $15\times$ brighter entanglement sources and efficient nonlinear conversion on SiN. Integrated components--including low-loss beam splitters, waveguide crossers, and tunable interferometers--are complemented by III-V lasers and InP photodetectors with amplifiers achieving up to $99^{+1}_{-12}\%$ quantum efficiency and $3$ GHz bandwidth. This architecture unites ultra-efficient sources, nonlinear elements and detectors on a wafer-scale, low-loss platform, establishing a path toward large-scale, low-noise quantum photonic systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_17738 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform Thiel, Lillian Shen, Boqiang Venneberg, Jasper R. Guidry, Melissa A. Arnaud, Nic Slater, Adam Wang, Lucas Li, Xuefeng Castro, Josh Pang, Yiming Meunier, Max Patel, Sahil D. Shen, Yang Morin, Theodore Kudelin, Igor Song, Bowen Asawa, Kaustubh Bowers, John E. Vahala, Kerry Mavalvala, Nergis Yin, Xinghui Bowers, Steven Tran, Minh A. Komljenovic, Tin Moody, Galan Optics Quantum Physics Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high performance have been challenging to realize. Here we demonstrate a wafer-scale III-V-on-SiN quantum photonic platform that directly integrates III-V layers to foundry-fabricated SiN circuits. The SiN layer provides 200-300 nm thick waveguides with $<1$ dB/m loss and a mature passive photonics ecosystem, while III-V materials provide large $χ^{\left(2\right)}$ and $χ^{\left(3\right)}$ nonlinearities for parametric gain, frequency conversion and quantum light generation. Adiabatic interlayer couplers yield $<25$ mdB loss to InGaP waveguides and resonators with intrinsic quality factors exceeding $10^6$, enabling $15\times$ brighter entanglement sources and efficient nonlinear conversion on SiN. Integrated components--including low-loss beam splitters, waveguide crossers, and tunable interferometers--are complemented by III-V lasers and InP photodetectors with amplifiers achieving up to $99^{+1}_{-12}\%$ quantum efficiency and $3$ GHz bandwidth. This architecture unites ultra-efficient sources, nonlinear elements and detectors on a wafer-scale, low-loss platform, establishing a path toward large-scale, low-noise quantum photonic systems. |
| title | A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform |
| topic | Optics Quantum Physics |
| url | https://arxiv.org/abs/2605.17738 |