Termination-Preserved Ultra-high Tunneling Magnetoresistance in Altermagnetic KV2Se2O
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866916023072980992 |
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| author | Guo, Junnan Mavani, Himanshu Fang, Wenhui Tang, Jifeng Li, Wenhao Wu, Weikang Li, Hui Tsymbal, Evgeny Y. Zhang, Lishu |
| author_facet | Guo, Junnan Mavani, Himanshu Fang, Wenhui Tang, Jifeng Li, Wenhao Wu, Weikang Li, Hui Tsymbal, Evgeny Y. Zhang, Lishu |
| contents | Altermagnets exhibit nonrelativistic spin splitting without net magnetization, establishing a new platform for next-generation spintronic devices. Although altermagnetic tunnel junctions (AMTJs) represent the most promising realizations, their practical applications are hindered by low tunnel magnetoresistance (TMR) ratios and strong sensitivity to interfacial configurations. Here, we systematically explore the transport properties and microscopic mechanisms of AMTJs based on the recently discovered d-wave altermagnet KV2Se2O. Using first-principles calculations and orbital-resolved analysis, we demonstrate that the synergy between compressed nodal-point like spin-degenerate channels and coplanar interfacial magnetic order yields an ultra-high intrinsic TMR above 105% for all interfacial terminations. More importantly, K-termination effectively preserves bulk spin polarization through its unique passivation characteristics, leading to an ultra-high TMR up to 1012%. These results identify the coupling between momentum-space topology and interfacial passivation provides a reliable strategy for realizing giant magnetoresistive responses in altermagnetic spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_18493 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Termination-Preserved Ultra-high Tunneling Magnetoresistance in Altermagnetic KV2Se2O Guo, Junnan Mavani, Himanshu Fang, Wenhui Tang, Jifeng Li, Wenhao Wu, Weikang Li, Hui Tsymbal, Evgeny Y. Zhang, Lishu Materials Science Altermagnets exhibit nonrelativistic spin splitting without net magnetization, establishing a new platform for next-generation spintronic devices. Although altermagnetic tunnel junctions (AMTJs) represent the most promising realizations, their practical applications are hindered by low tunnel magnetoresistance (TMR) ratios and strong sensitivity to interfacial configurations. Here, we systematically explore the transport properties and microscopic mechanisms of AMTJs based on the recently discovered d-wave altermagnet KV2Se2O. Using first-principles calculations and orbital-resolved analysis, we demonstrate that the synergy between compressed nodal-point like spin-degenerate channels and coplanar interfacial magnetic order yields an ultra-high intrinsic TMR above 105% for all interfacial terminations. More importantly, K-termination effectively preserves bulk spin polarization through its unique passivation characteristics, leading to an ultra-high TMR up to 1012%. These results identify the coupling between momentum-space topology and interfacial passivation provides a reliable strategy for realizing giant magnetoresistive responses in altermagnetic spintronic devices. |
| title | Termination-Preserved Ultra-high Tunneling Magnetoresistance in Altermagnetic KV2Se2O |
| topic | Materials Science |
| url | https://arxiv.org/abs/2605.18493 |