Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series
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arXiv
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| _version_ | 1866916023099195392 |
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| author | Badola, Shalini Smiri, Adlen Pelini, Thomas Moghe, Aditi Riccardi, Tristan Pawbake, Amit Watanabe, Kenji Taniguchi, Takashi gerber, Iann C. Faugeras, Clement |
| author_facet | Badola, Shalini Smiri, Adlen Pelini, Thomas Moghe, Aditi Riccardi, Tristan Pawbake, Amit Watanabe, Kenji Taniguchi, Takashi gerber, Iann C. Faugeras, Clement |
| contents | Excitons in two-dimensional semiconductors are directly exposed to the environment and are sensitive to the dielectric properties of their surrounding. Here, we show that the Rydberg series of excited states of excitons in a monolayer WSe$_2$ encapsulated in hexagonal boron nitride (hBN) can be used to probe the pressure-induced modifications of the surrounding dielectric properties. We propose a model based on the pressure induced evolution of the interlayer distances in this van der Waals heterostructure and on the bulk dielectric properties of hBN. This approach allows a direct measurement of the dielectric constant of pressurized hBN and establishes a new methodology for dielectric sensing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_18506 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series Badola, Shalini Smiri, Adlen Pelini, Thomas Moghe, Aditi Riccardi, Tristan Pawbake, Amit Watanabe, Kenji Taniguchi, Takashi gerber, Iann C. Faugeras, Clement Mesoscale and Nanoscale Physics Materials Science Excitons in two-dimensional semiconductors are directly exposed to the environment and are sensitive to the dielectric properties of their surrounding. Here, we show that the Rydberg series of excited states of excitons in a monolayer WSe$_2$ encapsulated in hexagonal boron nitride (hBN) can be used to probe the pressure-induced modifications of the surrounding dielectric properties. We propose a model based on the pressure induced evolution of the interlayer distances in this van der Waals heterostructure and on the bulk dielectric properties of hBN. This approach allows a direct measurement of the dielectric constant of pressurized hBN and establishes a new methodology for dielectric sensing. |
| title | Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2605.18506 |