Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series

Fuente: arXiv
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Main Authors: Badola, Shalini, Smiri, Adlen, Pelini, Thomas, Moghe, Aditi, Riccardi, Tristan, Pawbake, Amit, Watanabe, Kenji, Taniguchi, Takashi, gerber, Iann C., Faugeras, Clement
Format: Preprint
Published: 2026
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author Badola, Shalini
Smiri, Adlen
Pelini, Thomas
Moghe, Aditi
Riccardi, Tristan
Pawbake, Amit
Watanabe, Kenji
Taniguchi, Takashi
gerber, Iann C.
Faugeras, Clement
author_facet Badola, Shalini
Smiri, Adlen
Pelini, Thomas
Moghe, Aditi
Riccardi, Tristan
Pawbake, Amit
Watanabe, Kenji
Taniguchi, Takashi
gerber, Iann C.
Faugeras, Clement
contents Excitons in two-dimensional semiconductors are directly exposed to the environment and are sensitive to the dielectric properties of their surrounding. Here, we show that the Rydberg series of excited states of excitons in a monolayer WSe$_2$ encapsulated in hexagonal boron nitride (hBN) can be used to probe the pressure-induced modifications of the surrounding dielectric properties. We propose a model based on the pressure induced evolution of the interlayer distances in this van der Waals heterostructure and on the bulk dielectric properties of hBN. This approach allows a direct measurement of the dielectric constant of pressurized hBN and establishes a new methodology for dielectric sensing.
format Preprint
id arxiv_https___arxiv_org_abs_2605_18506
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series
Badola, Shalini
Smiri, Adlen
Pelini, Thomas
Moghe, Aditi
Riccardi, Tristan
Pawbake, Amit
Watanabe, Kenji
Taniguchi, Takashi
gerber, Iann C.
Faugeras, Clement
Mesoscale and Nanoscale Physics
Materials Science
Excitons in two-dimensional semiconductors are directly exposed to the environment and are sensitive to the dielectric properties of their surrounding. Here, we show that the Rydberg series of excited states of excitons in a monolayer WSe$_2$ encapsulated in hexagonal boron nitride (hBN) can be used to probe the pressure-induced modifications of the surrounding dielectric properties. We propose a model based on the pressure induced evolution of the interlayer distances in this van der Waals heterostructure and on the bulk dielectric properties of hBN. This approach allows a direct measurement of the dielectric constant of pressurized hBN and establishes a new methodology for dielectric sensing.
title Probing Dielectric Screening in van der Waals Heterostructures via Pressure-Tuned Exciton Rydberg Series
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2605.18506