Photolithography-Only Fabrication of Transmons Using Double-Oblique Evaporation
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arXiv
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2026
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| author | Aoyanagi, K. Abe, S. Chen, S. Inada, T. Kawai, C. Mino, Y. Nakamura, K. Nakazono, K. Nitta, T. Watanabe, K. |
| author_facet | Aoyanagi, K. Abe, S. Chen, S. Inada, T. Kawai, C. Mino, Y. Nakamura, K. Nakazono, K. Nitta, T. Watanabe, K. |
| contents | We investigate a photolithography-only fabrication process for transmon Josephson junctions using a modified double-oblique evaporation geometry. Using a bilayer resist process and Al shadow evaporation, we fabricate junction structures and confirm by optical and scanning electron microscopy that the resulting narrowed crossing region reaches a geometrical area on the order of $10^4~\mathrm{nm}^2$, which lies in the size range relevant to qubit junction fabrication. Room-temperature resistance screening shows that the junction resistance falls within the target range for the present transmon design over a usable process window and exhibits a clear design dependence. We further implement fabricated junctions in transmon devices and evaluate them in a three-dimensional Al cavity at $20 \, \mathrm{mK}$, where we observe basic transmon qubit operation with $f_{01}$=4.865 GHz, $T_1 \sim 9 \, μ\mathrm{s}$, and $T_2^* \sim 0.4 \, μ\mathrm{s}$. These results demonstrate the feasibility of realizing functional transmon devices in a photolithography-only process using double-oblique evaporation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_19590 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Photolithography-Only Fabrication of Transmons Using Double-Oblique Evaporation Aoyanagi, K. Abe, S. Chen, S. Inada, T. Kawai, C. Mino, Y. Nakamura, K. Nakazono, K. Nitta, T. Watanabe, K. Quantum Physics Applied Physics We investigate a photolithography-only fabrication process for transmon Josephson junctions using a modified double-oblique evaporation geometry. Using a bilayer resist process and Al shadow evaporation, we fabricate junction structures and confirm by optical and scanning electron microscopy that the resulting narrowed crossing region reaches a geometrical area on the order of $10^4~\mathrm{nm}^2$, which lies in the size range relevant to qubit junction fabrication. Room-temperature resistance screening shows that the junction resistance falls within the target range for the present transmon design over a usable process window and exhibits a clear design dependence. We further implement fabricated junctions in transmon devices and evaluate them in a three-dimensional Al cavity at $20 \, \mathrm{mK}$, where we observe basic transmon qubit operation with $f_{01}$=4.865 GHz, $T_1 \sim 9 \, μ\mathrm{s}$, and $T_2^* \sim 0.4 \, μ\mathrm{s}$. These results demonstrate the feasibility of realizing functional transmon devices in a photolithography-only process using double-oblique evaporation. |
| title | Photolithography-Only Fabrication of Transmons Using Double-Oblique Evaporation |
| topic | Quantum Physics Applied Physics |
| url | https://arxiv.org/abs/2605.19590 |