Carrier-doping effect and anomalous transport properties in Ni-doped CeCoIn5 investigated by Hall resistivity measurements
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2026
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866913147464450048 |
|---|---|
| author | Koizumi, Ryosuke Fujimoto, Hayao Takahashi, Teppei Yashiro, Azumi Kawakami, Haruna Ishii, Kazuki Kosaka, Hinako Hasegawa, Takeshi Shimizu, Yusei Nakamura, Ai Aoki, Dai Tenya, Kenichi Yokoyama, Makoto |
| author_facet | Koizumi, Ryosuke Fujimoto, Hayao Takahashi, Teppei Yashiro, Azumi Kawakami, Haruna Ishii, Kazuki Kosaka, Hinako Hasegawa, Takeshi Shimizu, Yusei Nakamura, Ai Aoki, Dai Tenya, Kenichi Yokoyama, Makoto |
| contents | We investigated the effects of Ni doping on carrier density and anomalous electrical transport properties in CeCo$_{1-x}$Ni$_x$In$_5$ ($x \leq 0.3$) by performing Hall resistivity measurements. The carrier density, estimated from the Hall coefficient $R_{\rm H}$ at a temperature of 0.5 K in high magnetic fields, increases linearly with $x$, indicating that the doped Ni ions act as electron dopants. In CeCoIn$_5$, the magnitude of $-R_{\rm H}$ is strongly enhanced at magnetic fields near the superconducting upper critical field $H_{c2}$ and in the low-field region above the superconducting transition temperature $T_c$. However, these anomalies are found to be significantly suppressed by Ni doping. Possible origins of this suppression in $-R_{\rm H}$ are discussed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_20685 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Carrier-doping effect and anomalous transport properties in Ni-doped CeCoIn5 investigated by Hall resistivity measurements Koizumi, Ryosuke Fujimoto, Hayao Takahashi, Teppei Yashiro, Azumi Kawakami, Haruna Ishii, Kazuki Kosaka, Hinako Hasegawa, Takeshi Shimizu, Yusei Nakamura, Ai Aoki, Dai Tenya, Kenichi Yokoyama, Makoto Superconductivity Strongly Correlated Electrons We investigated the effects of Ni doping on carrier density and anomalous electrical transport properties in CeCo$_{1-x}$Ni$_x$In$_5$ ($x \leq 0.3$) by performing Hall resistivity measurements. The carrier density, estimated from the Hall coefficient $R_{\rm H}$ at a temperature of 0.5 K in high magnetic fields, increases linearly with $x$, indicating that the doped Ni ions act as electron dopants. In CeCoIn$_5$, the magnitude of $-R_{\rm H}$ is strongly enhanced at magnetic fields near the superconducting upper critical field $H_{c2}$ and in the low-field region above the superconducting transition temperature $T_c$. However, these anomalies are found to be significantly suppressed by Ni doping. Possible origins of this suppression in $-R_{\rm H}$ are discussed. |
| title | Carrier-doping effect and anomalous transport properties in Ni-doped CeCoIn5 investigated by Hall resistivity measurements |
| topic | Superconductivity Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2605.20685 |