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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
| Publié: |
2026
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| Sujets: | |
| Accès en ligne: | https://arxiv.org/abs/2605.21297 |
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| _version_ | 1866911702238363648 |
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| author | Zhou, Ling-Jie Zhuo, Deyi Tay, Han Yan, Zi-Jie Xiao, Pu Liu, Xiaoda Zhang, Bomin Chang, Cui-Zu |
| author_facet | Zhou, Ling-Jie Zhuo, Deyi Tay, Han Yan, Zi-Jie Xiao, Pu Liu, Xiaoda Zhang, Bomin Chang, Cui-Zu |
| contents | Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic ferromagnetism, provide a unique platform for realizing SOT switching of edge current chirality in quantum anomalous Hall (QAH) insulators. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI trilayers with controlled layer thicknesses on heat-treated SrTiO3(111) substrates. Electrical transport measurements reveal that SOT-driven magnetization reversal and the associated switching of edge current chirality are governed by the SrTiO3(111) substrate-induced charging effect, which generates an asymmetric chemical-potential alignment between the top and bottom magnetic TI layers. Furthermore, we demonstrate that the switching polarity and efficiency can be tuned through heterostructure design, gate voltage, and in-plane magnetic field, consistent with SOT symmetry. These findings identify chemical potential asymmetry as the origin of the large SOT switching ratio in magnetic TI trilayers and establish a route for electrical control of edge current chirality in QAH insulators. This work advances the understanding of SOT switching mechanism in magnetic topological materials and paves the way for next-generation, energy-efficient QAH-based logic and memory devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_21297 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching Zhou, Ling-Jie Zhuo, Deyi Tay, Han Yan, Zi-Jie Xiao, Pu Liu, Xiaoda Zhang, Bomin Chang, Cui-Zu Mesoscale and Nanoscale Physics Materials Science Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic ferromagnetism, provide a unique platform for realizing SOT switching of edge current chirality in quantum anomalous Hall (QAH) insulators. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI trilayers with controlled layer thicknesses on heat-treated SrTiO3(111) substrates. Electrical transport measurements reveal that SOT-driven magnetization reversal and the associated switching of edge current chirality are governed by the SrTiO3(111) substrate-induced charging effect, which generates an asymmetric chemical-potential alignment between the top and bottom magnetic TI layers. Furthermore, we demonstrate that the switching polarity and efficiency can be tuned through heterostructure design, gate voltage, and in-plane magnetic field, consistent with SOT symmetry. These findings identify chemical potential asymmetry as the origin of the large SOT switching ratio in magnetic TI trilayers and establish a route for electrical control of edge current chirality in QAH insulators. This work advances the understanding of SOT switching mechanism in magnetic topological materials and paves the way for next-generation, energy-efficient QAH-based logic and memory devices. |
| title | Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2605.21297 |