Holographic EUV Lithography at 40 nm Resolution
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arXiv
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| Autores principales: | , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| Materias: | |
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| _version_ | 1866918514726535168 |
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| author | Li, Ziqi Giannopoulos, Iason Dong, Lisong Kazazis, Dimitrios Ma, Xu Yu, Zongqiang Niu, Zhiyuan Ekinci, Yasin Wei, Yayi Mochi, Iacopo |
| author_facet | Li, Ziqi Giannopoulos, Iason Dong, Lisong Kazazis, Dimitrios Ma, Xu Yu, Zongqiang Niu, Zhiyuan Ekinci, Yasin Wei, Yayi Mochi, Iacopo |
| contents | Extreme ultraviolet (EUV) lithography is the cornerstone of the fabrication of advanced integrated circuits at the 7-nm node and beyond, but its reliance on multi-element reflective projection optics makes it inaccessible for small-scale research and prototyping. EUV interference lithography (EUV-IL) provides a lensless alternative but is intrinsically restricted to periodic structures. Here we demonstrate EUV holographic lithography (EUV-HL) as a lensless route to arbitrary, non-periodic, curvilinear patterning at the EUV wavelength of 13.5 nm. We introduce an inverse-design framework for computer-generated holograms that captures the dominant physical effects of EUV mask diffraction within a shift-invariant convolution model that is tractable for full mask layouts. Using this framework, we design and fabricate transmissive holographic masks by direct-write electron-beam lithography in hydrogen silsesquioxane, expose them with synchrotron-generated EUV radiation, and print target layouts with critical dimensions down to 40 nm, nearly an order of magnitude finer than the previous state of the art in EUV-HL. The demonstrated combination of sub-50 nm resolution, curvilinear design freedom, and a lensless optical setup establishes EUV-HL as a uniquely flexible tool for nanostructure prototyping at EUV wavelengths, and provides a natural pathway to non-periodic pattern prototyping at beyond-EUV (BEUV) wavelengths, which is currently inaccessible to interference-based methods. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_21430 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Holographic EUV Lithography at 40 nm Resolution Li, Ziqi Giannopoulos, Iason Dong, Lisong Kazazis, Dimitrios Ma, Xu Yu, Zongqiang Niu, Zhiyuan Ekinci, Yasin Wei, Yayi Mochi, Iacopo Optics Extreme ultraviolet (EUV) lithography is the cornerstone of the fabrication of advanced integrated circuits at the 7-nm node and beyond, but its reliance on multi-element reflective projection optics makes it inaccessible for small-scale research and prototyping. EUV interference lithography (EUV-IL) provides a lensless alternative but is intrinsically restricted to periodic structures. Here we demonstrate EUV holographic lithography (EUV-HL) as a lensless route to arbitrary, non-periodic, curvilinear patterning at the EUV wavelength of 13.5 nm. We introduce an inverse-design framework for computer-generated holograms that captures the dominant physical effects of EUV mask diffraction within a shift-invariant convolution model that is tractable for full mask layouts. Using this framework, we design and fabricate transmissive holographic masks by direct-write electron-beam lithography in hydrogen silsesquioxane, expose them with synchrotron-generated EUV radiation, and print target layouts with critical dimensions down to 40 nm, nearly an order of magnitude finer than the previous state of the art in EUV-HL. The demonstrated combination of sub-50 nm resolution, curvilinear design freedom, and a lensless optical setup establishes EUV-HL as a uniquely flexible tool for nanostructure prototyping at EUV wavelengths, and provides a natural pathway to non-periodic pattern prototyping at beyond-EUV (BEUV) wavelengths, which is currently inaccessible to interference-based methods. |
| title | Holographic EUV Lithography at 40 nm Resolution |
| topic | Optics |
| url | https://arxiv.org/abs/2605.21430 |