Quantifying the coupling between strain and cation valence in high entropy oxide thin films using electron microscopy
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
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2026
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| author | Ayyagari, Sai Venkata Gayathri Almishal, Saeed SI Mukherjee, Debangshu Roccapriore, Kevin M. Maria, Jon-Paul Alem, Nasim |
| author_facet | Ayyagari, Sai Venkata Gayathri Almishal, Saeed SI Mukherjee, Debangshu Roccapriore, Kevin M. Maria, Jon-Paul Alem, Nasim |
| contents | High entropy oxides (HEOs) are a class of materials with vast compositional space and tunable properties, making them attractive for applications in thermoelectrics, magnetism, ionic conduction, and beyond. However, their metastable nature makes the local structure, and consequently their properties, highly sensitive to growth conditions. It is therefore essential to probe the local modulations in atomic, chemical, and electronic structure as a function of growth conditions. Here, advanced S/TEM techniques, including 4D-STEM combined with electron energy loss spectroscopy and energy-dispersive X-ray spectroscopy are used to investigate the effect of substrate temperature on structure and strain at the nanoscale regime in HEO thin films. We quantify how nanoscale strain variations correlate with Co valence and subtle chemical differences in the films with the same nominal composition but different growth temperatures. Our results demonstrate that identical HEO compositions can accommodate distinct strain and defect states in thin film form and highlight how synthesis conditions can be leveraged to manipulate strain and Co valence. These findings establish a framework to tailor functional properties via strain and valence control in high entropy oxide thin films. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_21612 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Quantifying the coupling between strain and cation valence in high entropy oxide thin films using electron microscopy Ayyagari, Sai Venkata Gayathri Almishal, Saeed SI Mukherjee, Debangshu Roccapriore, Kevin M. Maria, Jon-Paul Alem, Nasim Materials Science High entropy oxides (HEOs) are a class of materials with vast compositional space and tunable properties, making them attractive for applications in thermoelectrics, magnetism, ionic conduction, and beyond. However, their metastable nature makes the local structure, and consequently their properties, highly sensitive to growth conditions. It is therefore essential to probe the local modulations in atomic, chemical, and electronic structure as a function of growth conditions. Here, advanced S/TEM techniques, including 4D-STEM combined with electron energy loss spectroscopy and energy-dispersive X-ray spectroscopy are used to investigate the effect of substrate temperature on structure and strain at the nanoscale regime in HEO thin films. We quantify how nanoscale strain variations correlate with Co valence and subtle chemical differences in the films with the same nominal composition but different growth temperatures. Our results demonstrate that identical HEO compositions can accommodate distinct strain and defect states in thin film form and highlight how synthesis conditions can be leveraged to manipulate strain and Co valence. These findings establish a framework to tailor functional properties via strain and valence control in high entropy oxide thin films. |
| title | Quantifying the coupling between strain and cation valence in high entropy oxide thin films using electron microscopy |
| topic | Materials Science |
| url | https://arxiv.org/abs/2605.21612 |