Topologically Driven Giant Effective Spin Mixing Conductance in Antiferromagnetic FeSn/Py Heterostructures
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arXiv
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866914587417247744 |
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| author | Khan, Kacho Imtiyaz Ali Kandwal, Nidhi Gupta, Pankhuri Khandelwal, Deeksha Kumar, Akash Åkerman, Johan Muduli, Pranaba Kishor |
| author_facet | Khan, Kacho Imtiyaz Ali Kandwal, Nidhi Gupta, Pankhuri Khandelwal, Deeksha Kumar, Akash Åkerman, Johan Muduli, Pranaba Kishor |
| contents | The topological semimetal FeSn antiferromagnet, characterized by its kagome lattice, two-dimensional flat bands, and Dirac-like surface states, holds immense promise for spintronic applications. In this work, for the first time, we investigate the spin pumping behavior in epitaxial-FeSn/Py (Ni$_{80}$Fe$_{20}$) heterostructures. We report a giant effective spin mixing conductance (g$^{\uparrow \downarrow}_{\mathrm{eff}}$) of $(116\pm 7)$~nm$^{-2}$, which is nearly one order of magnitude higher than that of standard Pt/Py heterostructures. The insertion of a 3 nm Al spacer layer results in a two-fold reduction in the effective damping, confirming the interfacial origin of the large g$^{\uparrow\downarrow}_{\mathrm{eff}}$. Consistently, we observe an order-of-magnitude higher inverse spin Hall effect voltage in the FeSn/Py system compared to a reference Pt/Py film stack. We attribute the giant g$^{\uparrow\downarrow}_{\mathrm{eff}}$ to the direct interfacing of the Py layer with the topologically active [001]-kagome surface of epitaxial-FeSn. These findings establish the critical role of topologically active interfaces for advanced quantum-material-based spintronic devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2605_22180 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Topologically Driven Giant Effective Spin Mixing Conductance in Antiferromagnetic FeSn/Py Heterostructures Khan, Kacho Imtiyaz Ali Kandwal, Nidhi Gupta, Pankhuri Khandelwal, Deeksha Kumar, Akash Åkerman, Johan Muduli, Pranaba Kishor Mesoscale and Nanoscale Physics The topological semimetal FeSn antiferromagnet, characterized by its kagome lattice, two-dimensional flat bands, and Dirac-like surface states, holds immense promise for spintronic applications. In this work, for the first time, we investigate the spin pumping behavior in epitaxial-FeSn/Py (Ni$_{80}$Fe$_{20}$) heterostructures. We report a giant effective spin mixing conductance (g$^{\uparrow \downarrow}_{\mathrm{eff}}$) of $(116\pm 7)$~nm$^{-2}$, which is nearly one order of magnitude higher than that of standard Pt/Py heterostructures. The insertion of a 3 nm Al spacer layer results in a two-fold reduction in the effective damping, confirming the interfacial origin of the large g$^{\uparrow\downarrow}_{\mathrm{eff}}$. Consistently, we observe an order-of-magnitude higher inverse spin Hall effect voltage in the FeSn/Py system compared to a reference Pt/Py film stack. We attribute the giant g$^{\uparrow\downarrow}_{\mathrm{eff}}$ to the direct interfacing of the Py layer with the topologically active [001]-kagome surface of epitaxial-FeSn. These findings establish the critical role of topologically active interfaces for advanced quantum-material-based spintronic devices. |
| title | Topologically Driven Giant Effective Spin Mixing Conductance in Antiferromagnetic FeSn/Py Heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2605.22180 |