Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm

Fuente: arXiv
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Main Authors: Liu, Xiaolong, Schäfer, Sören, Chen, Jinyuan, Kearney, Patrik Mc, Paulus, Simon, Vedaraj, Varsha Ashwin, Vähänissi, Ville, Kontermann, Stefan, Crozier, Kenneth, Bullock, James, Savin, Hele
Format: Preprint
Published: 2026
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author Liu, Xiaolong
Schäfer, Sören
Chen, Jinyuan
Kearney, Patrik Mc
Paulus, Simon
Vedaraj, Varsha Ashwin
Vähänissi, Ville
Kontermann, Stefan
Crozier, Kenneth
Bullock, James
Savin, Hele
author_facet Liu, Xiaolong
Schäfer, Sören
Chen, Jinyuan
Kearney, Patrik Mc
Paulus, Simon
Vedaraj, Varsha Ashwin
Vähänissi, Ville
Kontermann, Stefan
Crozier, Kenneth
Bullock, James
Savin, Hele
contents Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit offers a promising "silicon-native" alternative, yet achieving practical short-wave infrared applications at room temperature remains a formidable challenge. Here, we demonstrate a high-detectivity hyperdoped silicon photodetector enabling room-temperature computational short-wave infrared imaging beyond Si bandgap wavelength at λ = 1550 nm. By integrating an ultrafast laser heating process step to reduce the dark current while keeping high responsivity, we achieve a specific detectivity D^* exceeding 10^9 Jones for 1550 nm at room temperature working in a forward-biased, photoconductive mode. The improved detectivity, coupled with a 59.4 dB linear dynamic range and kHz-scale bandwidth, allows us to demonstrate a single-pixel imaging system that reconstructs 1550 nm scenes at 65x63 pixels without cryogenic cooling. Our devices simultaneously support visible-light imaging, offering a path toward monolithically integrated, multispectral Si-native optical sensors. These results establish ultrafast-laser hyperdoped silicon as a viable platform for low-cost, room-temperature, short-wave infrared photonics, bridging the gap between advanced materials science and practical computational imaging system.
format Preprint
id arxiv_https___arxiv_org_abs_2605_22470
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm
Liu, Xiaolong
Schäfer, Sören
Chen, Jinyuan
Kearney, Patrik Mc
Paulus, Simon
Vedaraj, Varsha Ashwin
Vähänissi, Ville
Kontermann, Stefan
Crozier, Kenneth
Bullock, James
Savin, Hele
Optics
Instrumentation and Detectors
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit offers a promising "silicon-native" alternative, yet achieving practical short-wave infrared applications at room temperature remains a formidable challenge. Here, we demonstrate a high-detectivity hyperdoped silicon photodetector enabling room-temperature computational short-wave infrared imaging beyond Si bandgap wavelength at λ = 1550 nm. By integrating an ultrafast laser heating process step to reduce the dark current while keeping high responsivity, we achieve a specific detectivity D^* exceeding 10^9 Jones for 1550 nm at room temperature working in a forward-biased, photoconductive mode. The improved detectivity, coupled with a 59.4 dB linear dynamic range and kHz-scale bandwidth, allows us to demonstrate a single-pixel imaging system that reconstructs 1550 nm scenes at 65x63 pixels without cryogenic cooling. Our devices simultaneously support visible-light imaging, offering a path toward monolithically integrated, multispectral Si-native optical sensors. These results establish ultrafast-laser hyperdoped silicon as a viable platform for low-cost, room-temperature, short-wave infrared photonics, bridging the gap between advanced materials science and practical computational imaging system.
title Hyperdoped silicon photodetectors enable room-temperature computational SWIR imaging at 1550 nm
topic Optics
Instrumentation and Detectors
url https://arxiv.org/abs/2605.22470