A Non-Volatile Heterogeneous Quantum Dot III-V/Si DFB Laser with Optical Memristive Behavior
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| _version_ | 1866914588297003008 |
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| author | Cheung, Stanley Tossoun, Bassem Liang, Di Yuan, Yuan Hu, Yingtao Kurczveil, Geza Yang, Xucheng Beausoleil, Raymond |
| author_facet | Cheung, Stanley Tossoun, Bassem Liang, Di Yuan, Yuan Hu, Yingtao Kurczveil, Geza Yang, Xucheng Beausoleil, Raymond |
| contents | In this work, we introduce a non-volatile heterogeneous quantum dot (QD) III-V/Al2O3/Si distributed feedback (DFB) laser exhibiting optical memristive behavior. The device operates in the O-band (~1300 nm) with a threshold current density of 234 A/cm2 and a side-mode suppression ratio exceeding 48 dB. Co-integrated Al2O3-based memristors produce bipolar resistive switching, yielding non-volatile wavelength shifts of ~ 46 pm and ~ 17 dB peak power contrast with zero static holding power. The III-V/Al2O3/Si heterojunction memristor I-V hysteresis is also modeled. This new device enables simultaneous coherent light generation and persistent optical state storage, establishing a new class of active photonic memory for neuromorphic and reconfigurable WDM applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_22577 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | A Non-Volatile Heterogeneous Quantum Dot III-V/Si DFB Laser with Optical Memristive Behavior Cheung, Stanley Tossoun, Bassem Liang, Di Yuan, Yuan Hu, Yingtao Kurczveil, Geza Yang, Xucheng Beausoleil, Raymond Optics In this work, we introduce a non-volatile heterogeneous quantum dot (QD) III-V/Al2O3/Si distributed feedback (DFB) laser exhibiting optical memristive behavior. The device operates in the O-band (~1300 nm) with a threshold current density of 234 A/cm2 and a side-mode suppression ratio exceeding 48 dB. Co-integrated Al2O3-based memristors produce bipolar resistive switching, yielding non-volatile wavelength shifts of ~ 46 pm and ~ 17 dB peak power contrast with zero static holding power. The III-V/Al2O3/Si heterojunction memristor I-V hysteresis is also modeled. This new device enables simultaneous coherent light generation and persistent optical state storage, establishing a new class of active photonic memory for neuromorphic and reconfigurable WDM applications. |
| title | A Non-Volatile Heterogeneous Quantum Dot III-V/Si DFB Laser with Optical Memristive Behavior |
| topic | Optics |
| url | https://arxiv.org/abs/2605.22577 |