Localized Excitonic Emission in Wafer-Scale MOCVD-Grown GaSe 2D Nanosheets for Classical and Non-Classical Light Sources
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866917523457310720 |
|---|---|
| author | Sahoo, Bhabani Sankar Langlotz, Nils Fritjof Machchhar, Shachi Gaur, Kartik Günkel, Robin Bergmann, Max Ghadghooni, Naghmeh Koulas-Simos, Aris Belz, Jürgen Palekar, Chirag Chandrakant Ries, Maximilian Volz, Kerstin Reitzenstein, Stephan Limame, Imad |
| author_facet | Sahoo, Bhabani Sankar Langlotz, Nils Fritjof Machchhar, Shachi Gaur, Kartik Günkel, Robin Bergmann, Max Ghadghooni, Naghmeh Koulas-Simos, Aris Belz, Jürgen Palekar, Chirag Chandrakant Ries, Maximilian Volz, Kerstin Reitzenstein, Stephan Limame, Imad |
| contents | Wafer-scale growth of two-dimensional semiconductors remains a key challenge for their integration into photonic technologies. While most studies of two-dimensional semiconductors have focused on transition metal dichalcogenides and their scalable fabrication, comparatively little attention has been given to III-VI monochalcogenides. Here, we report wafer-scale growth of gallium selenide (GaSe) by metal-organic chemical vapor deposition (MOCVD) and investigate its structural and optical properties for visible-range classical and quantum light emission. Two samples with thicknesses ranging from a few monolayers to several micrometers, controlled via the growth time, were investigated. The 30-minute grown sample yields intense, broad photoluminescence spanning 1.7--2.0$\,$eV, whereas the thinner 3-minute sample exhibits discrete narrow emission lines and single-photon emission with $(g^{(2)}(0) = 0.15 \pm 0.10)$. Remarkably, cathodoluminescence mapping reveals pronounced spatial localization of both spectrally narrow and broad emission centers. Together with temperature-dependent power-law analysis and Raman mapping, our results indicate defect-induced emission rather than intrinsic excitonic recombination. These findings establish wafer-scale MOCVD grown 2D GaSe as a platform for classical and non-classical light sources and highlight defect-engineered localization as a route toward scalable quantum photonics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_23418 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Localized Excitonic Emission in Wafer-Scale MOCVD-Grown GaSe 2D Nanosheets for Classical and Non-Classical Light Sources Sahoo, Bhabani Sankar Langlotz, Nils Fritjof Machchhar, Shachi Gaur, Kartik Günkel, Robin Bergmann, Max Ghadghooni, Naghmeh Koulas-Simos, Aris Belz, Jürgen Palekar, Chirag Chandrakant Ries, Maximilian Volz, Kerstin Reitzenstein, Stephan Limame, Imad Mesoscale and Nanoscale Physics Wafer-scale growth of two-dimensional semiconductors remains a key challenge for their integration into photonic technologies. While most studies of two-dimensional semiconductors have focused on transition metal dichalcogenides and their scalable fabrication, comparatively little attention has been given to III-VI monochalcogenides. Here, we report wafer-scale growth of gallium selenide (GaSe) by metal-organic chemical vapor deposition (MOCVD) and investigate its structural and optical properties for visible-range classical and quantum light emission. Two samples with thicknesses ranging from a few monolayers to several micrometers, controlled via the growth time, were investigated. The 30-minute grown sample yields intense, broad photoluminescence spanning 1.7--2.0$\,$eV, whereas the thinner 3-minute sample exhibits discrete narrow emission lines and single-photon emission with $(g^{(2)}(0) = 0.15 \pm 0.10)$. Remarkably, cathodoluminescence mapping reveals pronounced spatial localization of both spectrally narrow and broad emission centers. Together with temperature-dependent power-law analysis and Raman mapping, our results indicate defect-induced emission rather than intrinsic excitonic recombination. These findings establish wafer-scale MOCVD grown 2D GaSe as a platform for classical and non-classical light sources and highlight defect-engineered localization as a route toward scalable quantum photonics. |
| title | Localized Excitonic Emission in Wafer-Scale MOCVD-Grown GaSe 2D Nanosheets for Classical and Non-Classical Light Sources |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2605.23418 |