C-band 160 Gbs-1 Zero-bias Graphene Photodetectors: Breaking the Responsivity-Bandwidth Trade-off by Heterostructure Engineering

Fuente: arXiv
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Auteurs principaux: Soundarapandian, Karuppasamy Pandian, Montanaro, Alberto, Vangelidis, Ioannis, Koepfli, Stefan M., Orsini, Lorenzo, Ceccanti, Matteo, Kulmer, Laurenz, Misal, Misal, Reep, Tom, Castilla, Sebastián, Watanabe, Kenji, Taniguchi, Takashi, Tongay, Seth Ariel, Van Thourhout, Dries, Leuthold, Juerg, Tielrooij, Klaas-Jan, Lidorikis, Elefterios, Romagnoli, Marco, Sorianello, Vito, Koppens, Frank H. L.
Format: Preprint
Publié: 2026
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_version_ 1866916039573372928
author Soundarapandian, Karuppasamy Pandian
Montanaro, Alberto
Vangelidis, Ioannis
Koepfli, Stefan M.
Orsini, Lorenzo
Ceccanti, Matteo
Kulmer, Laurenz
Misal, Misal
Reep, Tom
Castilla, Sebastián
Watanabe, Kenji
Taniguchi, Takashi
Tongay, Seth Ariel
Van Thourhout, Dries
Leuthold, Juerg
Tielrooij, Klaas-Jan
Lidorikis, Elefterios
Romagnoli, Marco
Sorianello, Vito
Koppens, Frank H. L.
author_facet Soundarapandian, Karuppasamy Pandian
Montanaro, Alberto
Vangelidis, Ioannis
Koepfli, Stefan M.
Orsini, Lorenzo
Ceccanti, Matteo
Kulmer, Laurenz
Misal, Misal
Reep, Tom
Castilla, Sebastián
Watanabe, Kenji
Taniguchi, Takashi
Tongay, Seth Ariel
Van Thourhout, Dries
Leuthold, Juerg
Tielrooij, Klaas-Jan
Lidorikis, Elefterios
Romagnoli, Marco
Sorianello, Vito
Koppens, Frank H. L.
contents Graphene photodetectors offer ultrafast response and broadband operation, but their responsivity is typically limited by rapid hot-carrier cooling, leading to a trade-off between sensitivity and speed. Here, we demonstrate that modifying the dielectric environment provides an effective route to control hot-carrier cooling and enhance device performance. By employing a WSe2 encapsulation architecture, we suppress out-of-plane energy dissipation, leading to an increased cooling length (~2.68 um) and a reduced heat-exchange coefficient. As a result, we obtain zero-bias graphene photodetectors with responsivities up to ~0.12 A/W (potentially ~0.4 A/W) while maintaining ultrafast operation beyond the setup-limited 110 GHz bandwidth. The devices enable direct detection at data rates of 120 Gb s-1 (NRZ) and 160 Gb s-1 (PAM-4), with performance achieved using minimal digital signal processing. These results establish dielectric engineering as a key design axis for controlling hot-carrier dynamics, enabling energy-efficient, high-speed optical receivers for next-generation interconnects and AI-driven data systems.
format Preprint
id arxiv_https___arxiv_org_abs_2605_23627
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle C-band 160 Gbs-1 Zero-bias Graphene Photodetectors: Breaking the Responsivity-Bandwidth Trade-off by Heterostructure Engineering
Soundarapandian, Karuppasamy Pandian
Montanaro, Alberto
Vangelidis, Ioannis
Koepfli, Stefan M.
Orsini, Lorenzo
Ceccanti, Matteo
Kulmer, Laurenz
Misal, Misal
Reep, Tom
Castilla, Sebastián
Watanabe, Kenji
Taniguchi, Takashi
Tongay, Seth Ariel
Van Thourhout, Dries
Leuthold, Juerg
Tielrooij, Klaas-Jan
Lidorikis, Elefterios
Romagnoli, Marco
Sorianello, Vito
Koppens, Frank H. L.
Optics
Graphene photodetectors offer ultrafast response and broadband operation, but their responsivity is typically limited by rapid hot-carrier cooling, leading to a trade-off between sensitivity and speed. Here, we demonstrate that modifying the dielectric environment provides an effective route to control hot-carrier cooling and enhance device performance. By employing a WSe2 encapsulation architecture, we suppress out-of-plane energy dissipation, leading to an increased cooling length (~2.68 um) and a reduced heat-exchange coefficient. As a result, we obtain zero-bias graphene photodetectors with responsivities up to ~0.12 A/W (potentially ~0.4 A/W) while maintaining ultrafast operation beyond the setup-limited 110 GHz bandwidth. The devices enable direct detection at data rates of 120 Gb s-1 (NRZ) and 160 Gb s-1 (PAM-4), with performance achieved using minimal digital signal processing. These results establish dielectric engineering as a key design axis for controlling hot-carrier dynamics, enabling energy-efficient, high-speed optical receivers for next-generation interconnects and AI-driven data systems.
title C-band 160 Gbs-1 Zero-bias Graphene Photodetectors: Breaking the Responsivity-Bandwidth Trade-off by Heterostructure Engineering
topic Optics
url https://arxiv.org/abs/2605.23627