A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
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arXiv
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866910250629595136 |
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| author | Jamil, Tariq Mazumder, Abdullah Al Mamun Hasan, S M Tazbiul Rahman, Mafruda Ali, Muhammad Malik, Ankit Hussain, Kamal Joishi, Chandan Sadek, Mansura Fiorenza, James G. Simin, Grigory Khan, Asif |
| author_facet | Jamil, Tariq Mazumder, Abdullah Al Mamun Hasan, S M Tazbiul Rahman, Mafruda Ali, Muhammad Malik, Ankit Hussain, Kamal Joishi, Chandan Sadek, Mansura Fiorenza, James G. Simin, Grigory Khan, Asif |
| contents | In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using a new low temperature (LT) pulsed metal-organic chemical vapor deposition (PMOCVD) doping scheme for the n++-GaN regrown contacts and an AlxGa1-xN digital alloy (DA) channel layer comprising short period super lattices (SPSL) of AlN and GaN. Pulsed growth and doping yield a sheet resistivity which is a factor of 3-5 lower than that of conventional doped n++-GaN layers grown under identical conditions. Moreover, the regrown n++-GaN layer has no hetero-barrier with the GaN layers of the AlxGa1-xN DA channel. These innovations led to MOCVD regrown linear ohmic contacts and a record-low contact resistance Rc ~6.5 Ω-mm to the Al0.62Ga0.38N DA channel layer of a HEMT with AlN barrier layer. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_24221 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel Jamil, Tariq Mazumder, Abdullah Al Mamun Hasan, S M Tazbiul Rahman, Mafruda Ali, Muhammad Malik, Ankit Hussain, Kamal Joishi, Chandan Sadek, Mansura Fiorenza, James G. Simin, Grigory Khan, Asif Applied Physics In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using a new low temperature (LT) pulsed metal-organic chemical vapor deposition (PMOCVD) doping scheme for the n++-GaN regrown contacts and an AlxGa1-xN digital alloy (DA) channel layer comprising short period super lattices (SPSL) of AlN and GaN. Pulsed growth and doping yield a sheet resistivity which is a factor of 3-5 lower than that of conventional doped n++-GaN layers grown under identical conditions. Moreover, the regrown n++-GaN layer has no hetero-barrier with the GaN layers of the AlxGa1-xN DA channel. These innovations led to MOCVD regrown linear ohmic contacts and a record-low contact resistance Rc ~6.5 Ω-mm to the Al0.62Ga0.38N DA channel layer of a HEMT with AlN barrier layer. |
| title | A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2605.24221 |