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A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Jamil, Tariq, Mazumder, Abdullah Al Mamun, Hasan, S M Tazbiul, Rahman, Mafruda, Ali, Muhammad, Malik, Ankit, Hussain, Kamal, Joishi, Chandan, Sadek, Mansura, Fiorenza, James G., Simin, Grigory, Khan, Asif
Format:	Preprint
Publié:	2026
Sujets:	Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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