Dilute Magnetism and Edge-State Engineering in Monolayer SnO

Fuente: arXiv
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Autori principali: Fukuta, Yuya, Adhikary, Souren, Tsukagoshi, Kazuhito, Wakabayashi, Katsunori
Natura: Preprint
Pubblicazione: 2026
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author Fukuta, Yuya
Adhikary, Souren
Tsukagoshi, Kazuhito
Wakabayashi, Katsunori
author_facet Fukuta, Yuya
Adhikary, Souren
Tsukagoshi, Kazuhito
Wakabayashi, Katsunori
contents Tin monoxide (SnO) is a p-type oxide semiconductor whose electronic properties can be widely modified via atomic-scale engineering. Using density functional theory, we investigate the electronic and magnetic properties of transition-metal (TM = Mn, Fe, Co and W) doped SnO monolayer within a large supercell. We find that all dopants induce finite localized magnetic moments, primarily originating from $d$-orbitals of the impurity atoms. We show that these localized magnetic states give rise to nearly dispersionless bands in the vicinity of the Fermi energy (taking Co doped SnO as an example). In addition, we investigate dimensional effects by constructing nanoribbon geometries of SnO monolayer. The ribbons exhibit intrinsic edge-localized states that are largely independent of ribbon width. For chiral nanoribbons oriented along a low-symmetry direction of the square lattice, we find that oxygen-rich edges are thermodynamically most stable and remain semiconducting, whereas Sn-terminated edges host metallic one-dimensional conduction channels. Our results demonstrate that transition-metal doping and edge engineering provide effective routes to tailor the electronic properties of SnO monolayer, making it a promising candidate for future spintronic and nanoelectronic applications.
format Preprint
id arxiv_https___arxiv_org_abs_2605_24376
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Dilute Magnetism and Edge-State Engineering in Monolayer SnO
Fukuta, Yuya
Adhikary, Souren
Tsukagoshi, Kazuhito
Wakabayashi, Katsunori
Materials Science
Mesoscale and Nanoscale Physics
Tin monoxide (SnO) is a p-type oxide semiconductor whose electronic properties can be widely modified via atomic-scale engineering. Using density functional theory, we investigate the electronic and magnetic properties of transition-metal (TM = Mn, Fe, Co and W) doped SnO monolayer within a large supercell. We find that all dopants induce finite localized magnetic moments, primarily originating from $d$-orbitals of the impurity atoms. We show that these localized magnetic states give rise to nearly dispersionless bands in the vicinity of the Fermi energy (taking Co doped SnO as an example). In addition, we investigate dimensional effects by constructing nanoribbon geometries of SnO monolayer. The ribbons exhibit intrinsic edge-localized states that are largely independent of ribbon width. For chiral nanoribbons oriented along a low-symmetry direction of the square lattice, we find that oxygen-rich edges are thermodynamically most stable and remain semiconducting, whereas Sn-terminated edges host metallic one-dimensional conduction channels. Our results demonstrate that transition-metal doping and edge engineering provide effective routes to tailor the electronic properties of SnO monolayer, making it a promising candidate for future spintronic and nanoelectronic applications.
title Dilute Magnetism and Edge-State Engineering in Monolayer SnO
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2605.24376