Anomalous Hall Effect in Silicon-Compatible Altermagnetic alpha-MnTe Thin Films
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arXiv
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| Autori principali: | , , , , , , , , , , |
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| Natura: | Preprint |
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2026
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| author | Sarkar, Rajib Negi, Subhransu Kumar Das, Arindom Mandal, Arijit Bhardwaj, Pankaj Guin, Sohini Das, Aryaman Shyaga, Naresh Nanda, Laxmipriya Nanda, B. R. K. Suri, Dhavala |
| author_facet | Sarkar, Rajib Negi, Subhransu Kumar Das, Arindom Mandal, Arijit Bhardwaj, Pankaj Guin, Sohini Das, Aryaman Shyaga, Naresh Nanda, Laxmipriya Nanda, B. R. K. Suri, Dhavala |
| contents | Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial integration of alpha-MnTe thin films on Si(111) via molecular beam epitaxy and demonstrate a robust anomalous Hall effect (AHE) in this silicon-compatible altermagnetic system. Despite the absence of net magnetization, the films exhibit a pronounced hysteretic Hall response, providing clear evidence of finite Berry curvature generated by symmetry breaking in the thin-film geometry. High resolution structural and spectroscopic characterization confirms phase-pure, epitaxial growth with hexagonal NiAs-type symmetry, while magnetotransport measurements reveal correlated hysteresis in both transverse and longitudinal channels with systematic temperature evolution. First-principles calculations reveal substantial uncompensated Berry curvature arising from the spin-split band structure consistent with altermagnetic symmetry and the origin of the observed Hall response. These results establish MnTe/Si(111) as a silicon-compatible altermagnetic platform and chart a concrete pathway for embedding Berry-phase-driven functionalities into scalable semiconductor device architectures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_25953 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Anomalous Hall Effect in Silicon-Compatible Altermagnetic alpha-MnTe Thin Films Sarkar, Rajib Negi, Subhransu Kumar Das, Arindom Mandal, Arijit Bhardwaj, Pankaj Guin, Sohini Das, Aryaman Shyaga, Naresh Nanda, Laxmipriya Nanda, B. R. K. Suri, Dhavala Materials Science Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial integration of alpha-MnTe thin films on Si(111) via molecular beam epitaxy and demonstrate a robust anomalous Hall effect (AHE) in this silicon-compatible altermagnetic system. Despite the absence of net magnetization, the films exhibit a pronounced hysteretic Hall response, providing clear evidence of finite Berry curvature generated by symmetry breaking in the thin-film geometry. High resolution structural and spectroscopic characterization confirms phase-pure, epitaxial growth with hexagonal NiAs-type symmetry, while magnetotransport measurements reveal correlated hysteresis in both transverse and longitudinal channels with systematic temperature evolution. First-principles calculations reveal substantial uncompensated Berry curvature arising from the spin-split band structure consistent with altermagnetic symmetry and the origin of the observed Hall response. These results establish MnTe/Si(111) as a silicon-compatible altermagnetic platform and chart a concrete pathway for embedding Berry-phase-driven functionalities into scalable semiconductor device architectures. |
| title | Anomalous Hall Effect in Silicon-Compatible Altermagnetic alpha-MnTe Thin Films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2605.25953 |