Conditions for domain-free negative capacitance
Fuente:
arXiv
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| Autori principali: | , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866911718183010304 |
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| author | Ravindran, Prasanna Venkatesan Ravikumar, Priyankka Gundlapudi Khan, Asif Islam |
| author_facet | Ravindran, Prasanna Venkatesan Ravikumar, Priyankka Gundlapudi Khan, Asif Islam |
| contents | While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the question: what are the conditions to achieve ideal, domain-free negative capacitance in ferroelectric-dielectric heterostructures? Our main claim is that for given thicknesses of the ferroelectric and the dielectric layers, there is a critical value of domain wall energy parameter -- above which the system would be stabilized in an ideal and robust domain-free negative capacitance state and would be robust against domain formation. Our analyses suggest that to achieve ideal negative capacitance, efforts should lie in understanding the means to control the domain wall energy on all fronts, both theory and experiments via high throughput design, discovery, and engineering of ferroelectrics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_26536 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Conditions for domain-free negative capacitance Ravindran, Prasanna Venkatesan Ravikumar, Priyankka Gundlapudi Khan, Asif Islam Materials Science Mesoscale and Nanoscale Physics Applied Physics While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the question: what are the conditions to achieve ideal, domain-free negative capacitance in ferroelectric-dielectric heterostructures? Our main claim is that for given thicknesses of the ferroelectric and the dielectric layers, there is a critical value of domain wall energy parameter -- above which the system would be stabilized in an ideal and robust domain-free negative capacitance state and would be robust against domain formation. Our analyses suggest that to achieve ideal negative capacitance, efforts should lie in understanding the means to control the domain wall energy on all fronts, both theory and experiments via high throughput design, discovery, and engineering of ferroelectrics. |
| title | Conditions for domain-free negative capacitance |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2605.26536 |