Radiative electronic bound states in the continuum from defects in semiconductors
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arXiv
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| Auteurs principaux: | , , , , |
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| Format: | Preprint |
| Publié: |
2026
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| _version_ | 1866916049429987328 |
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| author | Hong, Seong Yun Tan, Liang Z. Lee, Ki Hoon Kang, Youngho Lee, Yeonghun |
| author_facet | Hong, Seong Yun Tan, Liang Z. Lee, Ki Hoon Kang, Youngho Lee, Yeonghun |
| contents | Continuum-buried defect states in semiconductors are generally expected to be optically inactive due to their strong coupling to continuum bands. Here, we show that such defects can instead host radiative electronic bound states in the continuum (BICs), using the silicon G-center as a prototypical example. Hybrid-functional first-principles calculations with a Hubbard $U$ correction reveal that a localized defect state, initially buried below the valence band maximum (VBM) in the ground state, undergoes exchange-driven energy-level reordering under optical excitation and shifts above the VBM. This exchange-induced transition suppresses nonradiative decay and enables robust radiative emission. By computing temperature-dependent nonradiative lifetimes and comparing them with experimental photoluminescence (PL) lifetimes, we quantitatively reproduce the observed temperature dependence of the emission. These results uncover a stabilization mechanism for continuum-embedded defect states and establish electronic BICs as a general paradigm for designing defect-based optical systems, including quantum emitters and qubits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_26841 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Radiative electronic bound states in the continuum from defects in semiconductors Hong, Seong Yun Tan, Liang Z. Lee, Ki Hoon Kang, Youngho Lee, Yeonghun Materials Science Quantum Physics Continuum-buried defect states in semiconductors are generally expected to be optically inactive due to their strong coupling to continuum bands. Here, we show that such defects can instead host radiative electronic bound states in the continuum (BICs), using the silicon G-center as a prototypical example. Hybrid-functional first-principles calculations with a Hubbard $U$ correction reveal that a localized defect state, initially buried below the valence band maximum (VBM) in the ground state, undergoes exchange-driven energy-level reordering under optical excitation and shifts above the VBM. This exchange-induced transition suppresses nonradiative decay and enables robust radiative emission. By computing temperature-dependent nonradiative lifetimes and comparing them with experimental photoluminescence (PL) lifetimes, we quantitatively reproduce the observed temperature dependence of the emission. These results uncover a stabilization mechanism for continuum-embedded defect states and establish electronic BICs as a general paradigm for designing defect-based optical systems, including quantum emitters and qubits. |
| title | Radiative electronic bound states in the continuum from defects in semiconductors |
| topic | Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2605.26841 |