APA (7th ed.) Citation

Ono, T., Ohashi, M., Shigeno, T., Uchida, Y., Yasui, Y., Kita, K., & Sugimoto, Y. (2026). Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO$_2$/4H-SiC Interface.

Chicago Style (17th ed.) Citation

Ono, Takahiro, Mizuki Ohashi, Tomohiro Shigeno, Yutaro Uchida, Yuuki Yasui, Koji Kita, and Yoshiaki Sugimoto. Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO$_2$/4H-SiC Interface. 2026.

MLA (9th ed.) Citation

Ono, Takahiro, et al. Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO$_2$/4H-SiC Interface. 2026.