Orbital and Spin-Orbit Torque Interplay in Ta/W-based Magnetic Tunnel Junctions with Vertical Non-local Switching
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arXiv
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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
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2026
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| _version_ | 1866911720934473728 |
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| author | Biagi, Marco Capriata, Corrado C. M. Senapati, K. Subham Koll, Ioannis Trikoilis Bouchard, Corentin Sousa, Ricardo C. Hutin, Louis Viala, Bernard Garello, Kevin |
| author_facet | Biagi, Marco Capriata, Corrado C. M. Senapati, K. Subham Koll, Ioannis Trikoilis Bouchard, Corentin Sousa, Ricardo C. Hutin, Louis Viala, Bernard Garello, Kevin |
| contents | Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations, with charge-to-spin conversion ($ξ_{DL}$) reaching $\sim$ 45\%, far below the projected $\sim$ 80\% needed to comply with the current delivery of advanced transistor nodes. Recent advances in orbital current physics, evidenced in a wide class of materials, offer a path to enhance $ξ_{DL}$. Here, we study the Ta(3-30 nm)\slash W(1-4 nm) system, revealing a large additional spin-orbit torque contribution arising from Ta, a four-fold increase compared to the spin Hall effect in Ta alone, attributed to the orbital Hall contribution. This system exhibits larger $ξ_{DL}$ than W-based SOT systems with more robust perpendicular magnetic anisotropy and compatibility with 400$^\circ$C annealing. Leveraging these advantages, we integrate the Ta/W system into 3-terminal SOT-MTJ devices, showing a level of performance similar to that of W-based systems. Our results show that orbital physics can be easily integrated into SOT-MTJ systems, offering a viable strategy to enhance SOT-MRAM efficiency. In addition, we propose and demonstrate a proof-of-concept for vertical non-local switching of SOT-MTJ using orbital torques, simplifying bottom-pinned SOT-MRAM fabrication. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_27215 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Orbital and Spin-Orbit Torque Interplay in Ta/W-based Magnetic Tunnel Junctions with Vertical Non-local Switching Biagi, Marco Capriata, Corrado C. M. Senapati, K. Subham Koll, Ioannis Trikoilis Bouchard, Corentin Sousa, Ricardo C. Hutin, Louis Viala, Bernard Garello, Kevin Mesoscale and Nanoscale Physics Applied Physics Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations, with charge-to-spin conversion ($ξ_{DL}$) reaching $\sim$ 45\%, far below the projected $\sim$ 80\% needed to comply with the current delivery of advanced transistor nodes. Recent advances in orbital current physics, evidenced in a wide class of materials, offer a path to enhance $ξ_{DL}$. Here, we study the Ta(3-30 nm)\slash W(1-4 nm) system, revealing a large additional spin-orbit torque contribution arising from Ta, a four-fold increase compared to the spin Hall effect in Ta alone, attributed to the orbital Hall contribution. This system exhibits larger $ξ_{DL}$ than W-based SOT systems with more robust perpendicular magnetic anisotropy and compatibility with 400$^\circ$C annealing. Leveraging these advantages, we integrate the Ta/W system into 3-terminal SOT-MTJ devices, showing a level of performance similar to that of W-based systems. Our results show that orbital physics can be easily integrated into SOT-MTJ systems, offering a viable strategy to enhance SOT-MRAM efficiency. In addition, we propose and demonstrate a proof-of-concept for vertical non-local switching of SOT-MTJ using orbital torques, simplifying bottom-pinned SOT-MRAM fabrication. |
| title | Orbital and Spin-Orbit Torque Interplay in Ta/W-based Magnetic Tunnel Junctions with Vertical Non-local Switching |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2605.27215 |