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Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors: A Simulation-Based Device-to-System Evaluation

Fuente: arXiv

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Detalles Bibliográficos
Autor principal:	Abouagour, Faris
Formato:	Preprint
Publicado:	2026
Materias:	Hardware Architecture Emerging Technologies B.7.1; C.1.3; I.2.6
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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