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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2605.28336 |
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| _version_ | 1866913168105668608 |
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| author | Nir-Harwood, Rivka-Galya Khan, Asir I. Ber, Emanuel Ordan, Efrat Stern, Keren Okabe, Kye L. Wainstein, Nicolás Yalon, Eilam Pop, Eric |
| author_facet | Nir-Harwood, Rivka-Galya Khan, Asir I. Ber, Emanuel Ordan, Efrat Stern, Keren Okabe, Kye L. Wainstein, Nicolás Yalon, Eilam Pop, Eric |
| contents | Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we review key innovations that have driven PCM technology to achieve energy consumption down to only tens of femtojoules per bit, and could further advance it closer to its fundamental limits. Because PCM switching is induced thermally, we highlight improvements in energy-efficiency through two primary strategies: by minimizing the active phase change material region to sub-10 nm dimensions, and by enhancing heat confinement within PCM devices to reduce thermal dissipation into the surrounding environment. While the theoretical limits could reach single attojoules per cubic nanometer of memory material, realizing these limits in practice is significantly constrained by electrical and thermal parasitics, particularly at contacts and interfaces. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2605_28336 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Energy and Scaling Limits of Phase-Change Memory Nir-Harwood, Rivka-Galya Khan, Asir I. Ber, Emanuel Ordan, Efrat Stern, Keren Okabe, Kye L. Wainstein, Nicolás Yalon, Eilam Pop, Eric Materials Science Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we review key innovations that have driven PCM technology to achieve energy consumption down to only tens of femtojoules per bit, and could further advance it closer to its fundamental limits. Because PCM switching is induced thermally, we highlight improvements in energy-efficiency through two primary strategies: by minimizing the active phase change material region to sub-10 nm dimensions, and by enhancing heat confinement within PCM devices to reduce thermal dissipation into the surrounding environment. While the theoretical limits could reach single attojoules per cubic nanometer of memory material, realizing these limits in practice is significantly constrained by electrical and thermal parasitics, particularly at contacts and interfaces. |
| title | Energy and Scaling Limits of Phase-Change Memory |
| topic | Materials Science |
| url | https://arxiv.org/abs/2605.28336 |